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BC808,CJ,Bipolar Transistors

BC808

Bipolar Transistors ,BC808 ,PNP ,VCEO:25V ,VCBO: 30V ,300mW ,800mA ,SOT-23,5E

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The image is for reference only, please refer to the drawing for details

Product number：	QT-TQT406P25VC03021201CJE
Manufacturer Product Number：	BC808
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	25V
Base Voltage(VCBO) ：	30V
Power Disspation ：	300mW
package ：	SOT-23
Description：	Bipolar Transistors ,BC808 ,PNP ,VCEO:25V ,VCBO: 30V ,300mW ,800mA ,SOT-23,5E

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Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

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Lead time： Estimated delivery date 2026-10-06

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Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

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