BC846_CJ_Bipolar Transistors_NPN_65V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-06-01

Online Inquiry

Product Recommendation Maker Dynamics Applications

2SA1036

Bipolar Transistors ,2SA1036 ,PNP ,VCEO:32V ,VCBO: 40V ,200mW ,500mA ,SOT-23,HQ

$0.000000 More
MMST3906

Bipolar Transistors ,MMST3906 ,PNP ,VCEO:40V ,VCBO: 40V ,200mW ,200mA ,SOT-323

$0.000000 More
D882

Bipolar Transistors ,D882 ,NPN ,VCEO:30V ,VCBO: 40V ,1500mW ,30000mA ,SOT-223,R

$0.000000 More
BC818

Bipolar Transistors ,BC818 ,NPN ,VCEO:25V ,VCBO: 30V ,300mW ,500mA ,SOT-23,6E

$0.000000 More
MMST5551

Bipolar Transistors ,MMST5551 ,NPN ,VCEO:160V ,VCBO: 180V ,200mW ,600mA ,SOT-323

$0.000000 More
2SC5658

Bipolar Transistors ,2SC5658 ,NPN ,VCEO:50V ,VCBO: 60V ,100mW ,150mA ,SOT-723,FQ

$0.000000 More
2SA812

Bipolar Transistors ,2SA812 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-23,M6

$0.000000 More
2SA1013

Bipolar Transistors ,2SA1013 ,PNP ,VCEO:160V ,VCBO: 160V ,900mW ,1000mA ,TO-92MOD,O

$0.000000 More
BCP51

Bipolar Transistors ,BCP51 ,PNP ,VCEO:45V ,VCBO: 45V ,1500mW ,1000mA ,SOT-223,10

$0.000000 More
2SC3930

Bipolar Transistors ,2SC3930 ,NPN ,VCEO:20V ,VCBO: 30V ,150mW ,30mA ,SOT-323,VB

$0.000000 More
2SC1623

Bipolar Transistors ,2SC1623 ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-323,L6

$0.000000 More
2SB1218A

Bipolar Transistors ,2SB1218A ,PNP ,VCEO:45V ,VCBO: 45V ,150mW ,100mA ,SOT-323,BR1

$0.000000 More
MMBT3906T

Bipolar Transistors ,MMBT3906T ,PNP ,VCEO:40V ,VCBO: 40V ,150mW ,200mA ,SOT-523

$0.000000 More
BCP54

Bipolar Transistors ,BCP54 ,NPN ,VCEO:45V ,VCBO: 45V ,1500mW ,1000mA ,SOT-223,10

$0.000000 More
KTA2014

Bipolar Transistors ,KTA2014 ,PNP ,VCEO:50V ,VCBO: 50V ,100mW ,150mA ,SOT-323,SO

$0.000000 More
2SC4102

Bipolar Transistors ,2SC4102 ,NPN ,VCEO:120V ,VCBO: 120V ,200mW ,50mA ,SOT-323,TS

$0.000000 More
MMBTA92

Bipolar Transistors ,MMBTA92 ,PNP ,VCEO:300V ,VCBO: 300V ,300mW ,300mA ,SOT-23

$0.016144 More
MMBT3906

Bipolar Transistors ,MMBT3906 ,PNP ,VCEO:40V ,VCBO: 40V ,200mW ,200mA ,SOT-23

$0.006506 More
BC857

Bipolar Transistors ,BC857 ,PNP ,VCEO:45V ,VCBO: 50V ,200mW ,100mA ,SOT-23,3F

$0.000000 More
KST10

Bipolar Transistors ,KST10 ,NPN ,VCEO:25V ,VCBO: 30V ,350mW ,40mA ,SOT-23

$0.000000 More

Product Recommendation Maker Dynamics Applications

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Product number：	QT-TQT409N65VC20060301CJB
Manufacturer Product Number：	BC846
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	65V
Base Voltage(VCBO) ：	80V
Power Disspation ：	200mW
package ：	SOT-23
Description：	Bipolar Transistors ,BC846 ,NPN ,VCEO:65V ,VCBO: 80V ,200mW ,100mA ,SOT-23,1B

BC846,CJ,Bipolar Transistors

BC846

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

BC846,CJ,Bipolar Transistors

BC846

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications