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BC848,CJ,Bipolar Transistors

BC848

Bipolar Transistors ,BC848 ,NPN ,VCEO:30V ,VCBO: 30V ,200mW ,100mA ,SOT-23,1J

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The image is for reference only, please refer to the drawing for details

Product number：	QT-TQT414N30VC03060301CJJ
Manufacturer Product Number：	BC848
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	30V
Base Voltage(VCBO) ：	30V
Power Disspation ：	200mW
package ：	SOT-23
Description：	Bipolar Transistors ,BC848 ,NPN ,VCEO:30V ,VCBO: 30V ,200mW ,100mA ,SOT-23,1J

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

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Lead time： Estimated delivery date 2026-09-29

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Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

SiC MOSFET module is a power semiconductor device made of a new material, silicon carbide (SiC), which outperforms mainstream silicon (Si) IGBT and MOSFET devices in high-speed switching performance and high-temperature environments. In industrial equipment applications that require higher rated voltage and larger current capacity, SiC MOSFET modules can meet the application needs, including inverters, converters, and photovoltaic inverters for rail cars, achieving low loss and miniaturization of the system.

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