BC848W_CJ_Bipolar Transistors_NPN_30V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	BC848W_SOT-323

Lead time： Estimated delivery date 2026-05-03

Online Inquiry

Product Recommendation Maker Dynamics Applications

MMSTA42

Bipolar Transistors ,MMSTA42 ,NPN ,VCEO:300V ,VCBO: 300V ,200mW ,200mA ,SOT-323

$0.000000 More
BC847T

Bipolar Transistors ,BC847T ,NPN ,VCEO:45V ,VCBO: 50V ,150mW ,100mA ,SOT-523,1F

$0.000000 More
S9014

Bipolar Transistors ,S9014 ,NPN ,VCEO:45V ,VCBO: 50V ,200mW ,100mA ,SOT-23

$0.007228 More
BC856W

Bipolar Transistors ,BC856W ,PNP ,VCEO:65V ,VCBO: 80V ,150mW ,100mA ,SOT-323,3B

$0.000000 More
2SA1579

Bipolar Transistors ,2SA1579 ,PNP ,VCEO:120V ,VCBO: 120V ,100mW ,50mA ,SOT-323,RS

$0.000000 More
KTA1298

Bipolar Transistors ,KTA1298 ,PNP ,VCEO:30V ,VCBO: 35V ,200mW ,800mA ,SOT-23,IY

$0.000000 More
BC857T

Bipolar Transistors ,BC857T ,PNP ,VCEO:45V ,VCBO: 50V ,150mW ,100mA ,SOT-523,3E

$0.000000 More
2SD1819A

Bipolar Transistors ,2SD1819A ,NPN ,VCEO:50V ,VCBO: 60V ,150mW ,100mA ,SOT-323,ZQ

$0.000000 More
2SA1774

Bipolar Transistors ,2SA1774 ,PNP ,VCEO:50V ,VCBO: 60V ,150mW ,150mA ,SOT-523,FS

$0.000000 More
2SA1774

Bipolar Transistors ,2SA1774 ,PNP ,VCEO:50V ,VCBO: 60V ,150mW ,150mA ,SOT-523,FQ

$0.000000 More
KTC4076

Bipolar Transistors ,KTC4076 ,NPN ,VCEO:30V ,VCBO: 35V ,100mW ,500mA ,SOT-323,WO

$0.000000 More
2SC5585

Bipolar Transistors ,2SC5585 ,NPN ,VCEO:12V ,VCBO: 15V ,150mW ,500mA ,SOT-523

$0.000000 More
KSA1182

Bipolar Transistors ,KSA1182 ,PNP ,VCEO:30V ,VCBO: 35V ,150mW ,500mA ,SOT-23,F1Y

$0.000000 More
CZT32C

Bipolar Transistors ,CZT32C ,PNP ,VCEO:100V ,VCBO: 100V ,1000mW ,3000mA ,SOT-223

$0.000000 More
BCW61

Bipolar Transistors ,BCW61 ,PNP ,VCEO:32V ,VCBO: 32V ,250mW ,100mA ,SOT-23,BD

$0.000000 More
2SA1313

Bipolar Transistors ,2SA1313 ,PNP ,VCEO:50V ,VCBO: 50V ,200mW ,500mA ,SOT-23,ACO

$0.000000 More
2SA1298

Bipolar Transistors ,2SA1298 ,PNP ,VCEO:30V ,VCBO: 35V ,200mW ,800mA ,SOT-23.IY

$0.000000 More
C1815

Bipolar Transistors ,C1815 ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,150mA ,SOT-23

$0.000000 More
2SD0602

Bipolar Transistors ,2SD0602 ,NPN ,VCEO:25V ,VCBO: 30V ,200mW ,500mA ,SOT-23,WR1

$0.000000 More
2SD1757K

Bipolar Transistors ,2SD1757K ,NPN ,VCEO:15V ,VCBO: 30V ,200mW ,500mA ,SOT-23,AAS

$0.000000 More

Product Recommendation Maker Dynamics Applications

SiC MOSFET module is a power semiconductor device made of a new material, silicon carbide (SiC), which outperforms mainstream silicon (Si) IGBT and MOSFET devices in high-speed switching performance and high-temperature environments. In industrial equipment applications that require higher rated voltage and larger current capacity, SiC MOSFET modules can meet the application needs, including inverters, converters, and photovoltaic inverters for rail cars, achieving low loss and miniaturization of the system.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

Product number：	QT-TQT415N30VC03010302CJL
Manufacturer Product Number：	BC848W
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	30V
Base Voltage(VCBO) ：	30V
Power Disspation ：	150mW
package ：	SOT-323
Description：	Bipolar Transistors ,BC848W ,NPN ,VCEO:30V ,VCBO: 30V ,150mW ,100mA ,SOT-323,1L

BC848W,CJ,Bipolar Transistors

BC848W

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

BC848W,CJ,Bipolar Transistors

BC848W

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications