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BC856,CJ,Bipolar Transistors

BC856

Bipolar Transistors ,BC856 ,PNP ,VCEO:65V ,VCBO: 80V ,200mW ,100mA ,SOT-23,3A

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The image is for reference only, please refer to the drawing for details

Product number：	QT-TQT416P65VC20060301CJA
Manufacturer Product Number：	BC856
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	65V
Base Voltage(VCBO) ：	80V
Power Disspation ：	200mW
package ：	SOT-23
Description：	Bipolar Transistors ,BC856 ,PNP ,VCEO:65V ,VCBO: 80V ,200mW ,100mA ,SOT-23,3A

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

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Lead time： Estimated delivery date 2026-09-29

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SiC MOSFET module is a power semiconductor device made of a new material, silicon carbide (SiC), which outperforms mainstream silicon (Si) IGBT and MOSFET devices in high-speed switching performance and high-temperature environments. In industrial equipment applications that require higher rated voltage and larger current capacity, SiC MOSFET modules can meet the application needs, including inverters, converters, and photovoltaic inverters for rail cars, achieving low loss and miniaturization of the system.

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