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BC857T,CJ,Bipolar Transistors

BC857T

Bipolar Transistors ,BC857T ,PNP ,VCEO:45V ,VCBO: 50V ,150mW ,100mA ,SOT-523,3F

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The image is for reference only, please refer to the drawing for details

Data Sheet： BC857T_SOT-523

Product number：	QT-TQT419P45VC05010303CJF
Manufacturer Product Number：	BC857T
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	45V
Base Voltage(VCBO) ：	50V
Power Disspation ：	150mW
package ：	SOT-523
Description：	Bipolar Transistors ,BC857T ,PNP ,VCEO:45V ,VCBO: 50V ,150mW ,100mA ,SOT-523,3F

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name
Data Sheet	BC857T_SOT-523

Lead time： Estimated delivery date 2026-05-21

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Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

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