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BC857T,CJ,Bipolar Transistors

BC857T

Bipolar Transistors ,BC857T ,PNP ,VCEO:45V ,VCBO: 50V ,150mW ,100mA ,SOT-523,3G

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The image is for reference only, please refer to the drawing for details

Data Sheet： BC857T_SOT-523

Product number：	QT-TQT419P45VC05010303CJG
Manufacturer Product Number：	BC857T
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	45V
Base Voltage(VCBO) ：	50V
Power Disspation ：	150mW
package ：	SOT-523
Description：	Bipolar Transistors ,BC857T ,PNP ,VCEO:45V ,VCBO: 50V ,150mW ,100mA ,SOT-523,3G

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File

File Type	File Name
Data Sheet	BC857T_SOT-523

Lead time： Estimated delivery date 2025-05-14

Product Recommendation Maker Dynamics Applications

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The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

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