BC858_CJ_Bipolar Transistors_PNP_30V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-03-30

Online Inquiry

Product Recommendation Maker Dynamics Applications

KTC3876

Bipolar Transistors ,KTC3876 ,NPN ,VCEO:30V ,VCBO: 35V ,200mW ,500mA ,SOT-23,WY

$0.000000 More
KTC3875

Bipolar Transistors ,KTC3875 ,NPN ,VCEO:50V ,VCBO: 60V ,150mW ,150mA ,SOT-23,ALO

$0.000000 More
KTA2014

Bipolar Transistors ,KTA2014 ,PNP ,VCEO:50V ,VCBO: 50V ,100mW ,150mA ,SOT-323,SY

$0.000000 More
BCW61

Bipolar Transistors ,BCW61 ,PNP ,VCEO:32V ,VCBO: 32V ,250mW ,100mA ,SOT-23,BA

$0.000000 More
2SA1037

Bipolar Transistors ,2SA1037 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,150mA ,SOT-23,FR

$0.000000 More
BCW61

Bipolar Transistors ,BCW61 ,PNP ,VCEO:32V ,VCBO: 32V ,250mW ,100mA ,SOT-23,BB

$0.000000 More
2SD596

Bipolar Transistors ,2SD596 ,NPN ,VCEO:25V ,VCBO: 30V ,200mW ,700mA ,SOT-23,1

$0.000000 More
2SC4215

Bipolar Transistors ,2SC4215 ,NPN ,VCEO:30V ,VCBO: 40V ,100mW ,20mA ,SOT-323,QR

$0.000000 More
MMBT3906

Bipolar Transistors ,MMBT3906 ,PNP ,VCEO:40V ,VCBO: 40V ,200mW ,200mA ,SOT-23

$0.006506 More
2SB1197

Bipolar Transistors ,2SB1197 ,PNP ,VCEO:32V ,VCBO: 40V ,200mW ,800mA ,SOT-23,AHR

$0.000000 More
2SC2411

Bipolar Transistors ,2SC2411 ,NPN ,VCEO:32V ,VCBO: 40V ,200mW ,500mA ,SOT-23

$0.000000 More
2SC4081

Bipolar Transistors ,2SC4081 ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,150mA ,SOT-323,BR

$0.000000 More
MMBT2222AT

Bipolar Transistors ,MMBT2222AT ,NPN ,VCEO:40V ,VCBO: 75V ,150mW ,600mA ,SOT-523

$0.000000 More
KTA1298

Bipolar Transistors ,KTA1298 ,PNP ,VCEO:30V ,VCBO: 35V ,200mW ,800mA ,SOT-23,IO

$0.000000 More
2SA1036

Bipolar Transistors ,2SA1036 ,PNP ,VCEO:32V ,VCBO: 40V ,200mW ,500mA ,SOT-23,HP

$0.000000 More
2SC4180

Bipolar Transistors ,2SC4180 ,NPN ,VCEO:120V ,VCBO: 120V ,150mW ,50mA ,SOT-323,D15

$0.000000 More
2SD1819A

Bipolar Transistors ,2SD1819A ,NPN ,VCEO:50V ,VCBO: 60V ,150mW ,100mA ,SOT-323,ZR

$0.000000 More
2SC2712

Bipolar Transistors ,2SC2712 ,NPN ,VCEO:50V ,VCBO: 60V ,150mW ,150mA ,SOT-23,LL

$0.000000 More
S9012W

Bipolar Transistors ,S9012W ,PNP ,VCEO:25V ,VCBO: 40V ,200mW ,500mA ,SOT-323

$0.000000 More
2SD1819A

Bipolar Transistors ,2SD1819A ,NPN ,VCEO:50V ,VCBO: 60V ,150mW ,100mA ,SOT-323,ZS

$0.000000 More

Product Recommendation Maker Dynamics Applications

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

Calculation method and formula for MOS transistor losses The losses of MOS transistors can be estimated by calculating their current losses and power losses. Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:

The Development Trend of High Voltage SiC MOSFET The research on high-voltage SiC MOSFETs is gradually deepening, mainly focusing on the design, preparation, and detection of high-voltage SiC MOSFETs. In the past two years, Sic Mosfet has broken through the peak tunneling voltage of 2600V, with crystal surface insulation characteristics as high as 200MV • cm-1, and static performance reaching 500A/1700V for a single chip in a half bridge topology. It can also support constant current and constant voltage regulator operation. In addition, there are SiC Mosfets designed for solid-state dye solar energy to meet the needs of these applications.

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

Silicon carbide (SiC) diodes are diodes made from silicon carbide as raw material. Silicon carbide diode, claimed to have zero reverse recovery time, is a dedicated boost diode for high-efficiency PFC boost circuits.

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

Product number：	QT-TQT421P30VC03060301CJL
Manufacturer Product Number：	BC858
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	30V
Base Voltage(VCBO) ：	30V
Power Disspation ：	200mW
package ：	SOT-23
Description：	Bipolar Transistors ,BC858 ,PNP ,VCEO:30V ,VCBO: 30V ,200mW ,100mA ,SOT-23,3L

BC858,CJ,Bipolar Transistors

BC858

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

BC858,CJ,Bipolar Transistors

BC858

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications