BCW61_CJ_Bipolar Transistors_PNP_32V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-09-14

Online Inquiry

Product Recommendation Maker Dynamics Applications

MMBTA06

Bipolar Transistors ,MMBTA06 ,NPN ,VCEO:80V ,VCBO: 80V ,300mW ,500mA ,SOT-23

$0.000000 More
FMMT449

Bipolar Transistors ,FMMT449 ,NPN ,VCEO:30V ,VCBO: 50V ,200mW ,1000mA ,SOT-23

$0.000000 More
KTC3265

Bipolar Transistors ,KTC3265 ,NPN ,VCEO:30V ,VCBO: 35V ,200mW ,800mA ,SOT-23,EO

$0.000000 More
2SB1197

Bipolar Transistors ,2SB1197 ,PNP ,VCEO:32V ,VCBO: 40V ,200mW ,800mA ,SOT-23,AHP

$0.000000 More
KTC3876

Bipolar Transistors ,KTC3876 ,NPN ,VCEO:30V ,VCBO: 35V ,200mW ,500mA ,SOT-23,WO

$0.000000 More
2SD1781

Bipolar Transistors ,2SD1781 ,NPN ,VCEO:32V ,VCBO: 40V ,200mW ,800mA ,SOT-23,AFR

$0.000000 More
2SC4738

Bipolar Transistors ,2SC4738 ,NPN ,VCEO:50V ,VCBO: 60V ,100mW ,150mA ,SOT-523,LL

$0.000000 More
BC858

Bipolar Transistors ,BC858 ,PNP ,VCEO:30V ,VCBO: 30V ,200mW ,100mA ,SOT-23,3L

$0.000000 More
KTA2014

Bipolar Transistors ,KTA2014 ,PNP ,VCEO:50V ,VCBO: 50V ,100mW ,150mA ,SOT-323,SG

$0.000000 More
2SA1611

Bipolar Transistors ,2SA1611 ,PNP ,VCEO:50V ,VCBO: 60V ,150mW ,100mA ,SOT-323,M7

$0.000000 More
2SB1197

Bipolar Transistors ,2SB1197 ,PNP ,VCEO:32V ,VCBO: 40V ,200mW ,800mA ,SOT-23,AHR

$0.000000 More
PZT4403

Bipolar Transistors ,PZT4403 ,PNP ,VCEO:40V ,VCBO: 40V ,1000mW ,600mA ,SOT-223

$0.000000 More
BC857W

Bipolar Transistors ,BC857W ,PNP ,VCEO:45V ,VCBO: 50V ,150mW ,100mA ,SOT-323,3E

$0.000000 More
MMBTA94

Bipolar Transistors ,MMBTA94 ,PNP ,VCEO:400V ,VCBO: 400V ,350mW ,200mA ,SOT-23

$0.000000 More
BF822

Bipolar Transistors ,BF822 ,NPN ,VCEO:250V ,VCBO: 250V ,250mW ,50mA ,SOT-23

$0.000000 More
BCP69

Bipolar Transistors ,BCP69 ,PNP ,VCEO:20V ,VCBO: 32V ,1000mW ,1000mA ,SOT-223,25

$0.000000 More
2SD596

Bipolar Transistors ,2SD596 ,NPN ,VCEO:25V ,VCBO: 30V ,200mW ,700mA ,SOT-23,DV3

$0.000000 More
2SC6114

Bipolar Transistors ,2SC6114 ,NPN ,VCEO:50V ,VCBO: 50V ,150mW ,100mA ,SOT-923

$0.000000 More
BF820

Bipolar Transistors ,BF820 ,NPN ,VCEO:300V ,VCBO: 300V ,250mW ,50mA ,SOT-23

$0.000000 More
2SA1579

Bipolar Transistors ,2SA1579 ,PNP ,VCEO:120V ,VCBO: 120V ,100mW ,50mA ,SOT-323,RS

$0.000000 More

Product Recommendation Maker Dynamics Applications

What are the differences between gallium nitride (GaN) and silicon carbide (SiC)? Gallium nitride (GaN) and silicon carbide (SiC) power transistors, two types of compound semiconductor devices, have emerged as solutions. These devices compete with long-life silicon power lateral diffusion metal oxide semiconductor (LDMOS) MOSFETs and super junction MOSFETs. GaN and SiC devices are similar in some aspects, but there are also significant differences.

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

SiC MOSFET module is a power semiconductor device made of a new material, silicon carbide (SiC), which outperforms mainstream silicon (Si) IGBT and MOSFET devices in high-speed switching performance and high-temperature environments. In industrial equipment applications that require higher rated voltage and larger current capacity, SiC MOSFET modules can meet the application needs, including inverters, converters, and photovoltaic inverters for rail cars, achieving low loss and miniaturization of the system.

Silicon carbide (SiC) diodes are diodes made from silicon carbide as raw material. Silicon carbide diode, claimed to have zero reverse recovery time, is a dedicated boost diode for high-efficiency PFC boost circuits.

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

Product number：	QT-TQT433P32VC37170301CJB
Manufacturer Product Number：	BCW61
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	32V
Base Voltage(VCBO) ：	32V
Power Disspation ：	250mW
package ：	SOT-23
Description：	Bipolar Transistors ,BCW61 ,PNP ,VCEO:32V ,VCBO: 32V ,250mW ,100mA ,SOT-23,BB

BCW61,CJ,Bipolar Transistors

BCW61

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

BCW61,CJ,Bipolar Transistors

BCW61

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications