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BCW61,CJ,Bipolar Transistors

BCW61

Bipolar Transistors ,BCW61 ,PNP ,VCEO:32V ,VCBO: 32V ,250mW ,100mA ,SOT-23,BD

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The image is for reference only, please refer to the drawing for details

Product number：	QT-TQT433P32VC37170301CJD
Manufacturer Product Number：	BCW61
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	32V
Base Voltage(VCBO) ：	32V
Power Disspation ：	250mW
package ：	SOT-23
Description：	Bipolar Transistors ,BCW61 ,PNP ,VCEO:32V ,VCBO: 32V ,250mW ,100mA ,SOT-23,BD

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Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

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Lead time： Estimated delivery date 2026-07-28

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What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

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The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

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Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

Combination of Silicon Carbide (SiC) Power Management Solutions Silicon carbide solutions support the replacement of aircraft's pneumatic and hydraulic systems with smaller, lighter, and more efficient electrical solutions to power onboard AC generators, actuators, and auxiliary power units (APU). This type of solution can also reduce the maintenance requirements of these systems. However, the most significant contribution of SiC technology lies in its mission to electrify commercial transport vehicles, which are one of the world's largest sources of GHG emissions. With the advent of 1700V metal oxide semiconductor field-effect transistors (MOSFETs) and configurable digital gate drive technology, today's SiC solutions enable designers to generate maximum productivity with minimal energy consumption for these systems.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

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