HNST WELCOME！ 0755-23173910

English /中文

Search

walter Precision resistor ever ohms fuse current diverter SMD fuse Alloy resistance

Cart 0

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

BF820,CJ,Bipolar Transistors

BF820

Bipolar Transistors ,BF820 ,NPN ,VCEO:300V ,VCBO: 300V ,250mW ,50mA ,SOT-23

✖

The image is for reference only, please refer to the drawing for details

Product number：	QT-TQT480N300C17170401CJ
Manufacturer Product Number：	BF820
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	300V
Base Voltage(VCBO) ：	300V
Power Disspation ：	250mW
package ：	SOT-23
Description：	Bipolar Transistors ,BF820 ,NPN ,VCEO:300V ,VCBO: 300V ,250mW ,50mA ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File

File Type	File Name

Lead time： Estimated delivery date 2025-05-04

Product Recommendation Maker Dynamics Applications

2SC2859

Bipolar Transistors ,2SC2859 ,NPN ,VCEO:30V ,VCBO: 35V ,150mW ,500mA ,SOT-23,WO

$0.000000 More
BCP55

Bipolar Transistors ,BCP55 ,NPN ,VCEO:60V ,VCBO: 60V ,1500mW ,1000mA ,SOT-223,10

$0.000000 More
M28S

Bipolar Transistors ,M28S ,NPN ,VCEO:20V ,VCBO: 40V ,200mW ,1000mA ,SOT-23

$0.000000 More
2SD596

Bipolar Transistors ,2SD596 ,NPN ,VCEO:25V ,VCBO: 30V ,200mW ,700mA ,SOT-23,DV3

$0.000000 More
2SA1162

Bipolar Transistors ,2SA1162 ,PNP ,VCEO:50V ,VCBO: 50V ,150mW ,150mA ,SOT-23,SY

$0.000000 More
2SD602A

Bipolar Transistors ,2SD602A ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,500mA ,SOT-23,XQ

$0.000000 More
CZT31C

Bipolar Transistors ,CZT31C ,NPN ,VCEO:100V ,VCBO: 100V ,1000mW ,3000mA ,SOT-223

$0.000000 More

Product Recommendation Maker Dynamics Applications

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

Analysis of Silicon Carbide (SiC) Technology Barriers: What are the Silicon Carbide Technology Barriers Groove type silicon carbide power devices have greater manufacturing difficulty. According to the different device structures, silicon carbide power devices can be mainly divided into planar devices and trench devices. Flat silicon carbide power devices have good unit consistency, simple manufacturing process, but are prone to JFET effect and have high parasitic capacitance and on state resistance. Compared to planar devices, groove type silicon carbide power devices have lower unit consistency and more complex manufacturing processes. However, the groove structure is beneficial for increasing device unit density, reducing the occurrence of JFET effect, and solving the problem of low channel mobility. It has excellent performance such as low on resistance, low parasitic capacitance, and low switching energy consumption, and has significant cost and performance advantages. It has become the mainstream direction of silicon carbide power device development.

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

Product Recommendation Maker Dynamics Applications