D882_CJ_Bipolar Transistors_NPN_30V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	D882_SOT-223.pdf

Lead time： Estimated delivery date 2026-06-30

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Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

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Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Product number：	QT-TQT506N30VC01132719CJG
Manufacturer Product Number：	D882
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	30V
Base Voltage(VCBO) ：	40V
Power Disspation ：	1500mW
package ：	SOT-223
Description：	Bipolar Transistors ,D882 ,NPN ,VCEO:30V ,VCBO: 40V ,1500mW ,30000mA ,SOT-223,GR

D882,CJ,Bipolar Transistors

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D882,CJ,Bipolar Transistors

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