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FMMT619,CJ,Bipolar Transistors

FMMT619

Bipolar Transistors ,FMMT619 ,NPN ,VCEO:50V ,VCBO: 50V ,350mW ,2000mA ,SOT-23

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The image is for reference only, please refer to the drawing for details

Product number：	QT-TQT517N50VC05041001CJ
Manufacturer Product Number：	FMMT619
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	50V
Base Voltage(VCBO) ：	50V
Power Disspation ：	350mW
package ：	SOT-23
Description：	Bipolar Transistors ,FMMT619 ,NPN ,VCEO:50V ,VCBO: 50V ,350mW ,2000mA ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

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Lead time： Estimated delivery date 2026-06-22

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Reverse Recovery Current and Electrical Test Item Vgs of Silicon Carbide (SiC) MOSFET The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process.

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The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

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