KSA1182_CJ_Bipolar Transistors_PNP_30V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-03-10

Online Inquiry

Product Recommendation Maker Dynamics Applications

BC846

Bipolar Transistors ,BC846 ,NPN ,VCEO:65V ,VCBO: 80V ,200mW ,100mA ,SOT-23,1A

$0.000000 More
BC848W

Bipolar Transistors ,BC848W ,NPN ,VCEO:30V ,VCBO: 30V ,150mW ,100mA ,SOT-323,1J

$0.000000 More
2SC1623

Bipolar Transistors ,2SC1623 ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-23

$0.000000 More
MMSTA56

Bipolar Transistors ,MMSTA56 ,PNP ,VCEO:80V ,VCBO: 80V ,200mW ,500mA ,SOT-323

$0.000000 More
BF820

Bipolar Transistors ,BF820 ,NPN ,VCEO:300V ,VCBO: 300V ,250mW ,50mA ,SOT-23

$0.000000 More
S9015W

Bipolar Transistors ,S9015W ,PNP ,VCEO:45V ,VCBO: 50V ,200mW ,100mA ,SOT-323

$0.000000 More
BC856

Bipolar Transistors ,BC856 ,PNP ,VCEO:65V ,VCBO: 80V ,200mW ,100mA ,SOT-23,3B

$0.000000 More
KTC4075

Bipolar Transistors ,KTC4075 ,NPN ,VCEO:50V ,VCBO: 60V ,100mW ,150mA ,SOT-23,LO

$0.000000 More
2SA1036

Bipolar Transistors ,2SA1036 ,PNP ,VCEO:32V ,VCBO: 40V ,200mW ,500mA ,SOT-23,HR

$0.000000 More
2SC2714

Bipolar Transistors ,2SC2714 ,NPN ,VCEO:30V ,VCBO: 40V ,100mW ,20mA ,SOT-23,QY

$0.000000 More
MMBT4403

Bipolar Transistors ,MMBT4403 ,PNP ,VCEO:40V ,VCBO: 40V ,300mW ,600mA ,SOT-23

$0.000000 More
BC818

Bipolar Transistors ,BC818 ,NPN ,VCEO:25V ,VCBO: 30V ,300mW ,500mA ,SOT-23,6F

$0.000000 More
MMBTA06

Bipolar Transistors ,MMBTA06 ,NPN ,VCEO:80V ,VCBO: 80V ,300mW ,500mA ,SOT-23

$0.000000 More
CJ201NL

Bipolar Transistors ,CJ201NL ,NPN ,VCEO:20V ,VCBO: 30V ,300mW ,1000mA ,SOT-23

$0.000000 More
KTA1504

Bipolar Transistors ,KTA1504 ,PNP ,VCEO:50V ,VCBO: 50V ,150mW ,150mA ,SOT-23,ASY

$0.000000 More
BCW61

Bipolar Transistors ,BCW61 ,PNP ,VCEO:32V ,VCBO: 32V ,250mW ,100mA ,SOT-23,BC

$0.000000 More
KTA1298

Bipolar Transistors ,KTA1298 ,PNP ,VCEO:30V ,VCBO: 35V ,200mW ,800mA ,SOT-23,IY

$0.000000 More
2SB1116

Bipolar Transistors ,2SB1116 ,PNP ,VCEO:50V ,VCBO: 60V ,350mW ,1000mA ,SOT-23

$0.000000 More
M8550

Bipolar Transistors ,M8550 ,PNP ,VCEO:25V ,VCBO: 40V ,200mW ,800mA ,SOT-23

$0.000000 More
BC858

Bipolar Transistors ,BC858 ,PNP ,VCEO:30V ,VCBO: 30V ,200mW ,100mA ,SOT-23,3L

$0.000000 More

Product Recommendation Maker Dynamics Applications

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

The Development Trend of High Voltage SiC MOSFET The research on high-voltage SiC MOSFETs is gradually deepening, mainly focusing on the design, preparation, and detection of high-voltage SiC MOSFETs. In the past two years, Sic Mosfet has broken through the peak tunneling voltage of 2600V, with crystal surface insulation characteristics as high as 200MV • cm-1, and static performance reaching 500A/1700V for a single chip in a half bridge topology. It can also support constant current and constant voltage regulator operation. In addition, there are SiC Mosfets designed for solid-state dye solar energy to meet the needs of these applications.

What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

Product number：	QT-TQT524P30VC06010501CJF
Manufacturer Product Number：	KSA1182
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	30V
Base Voltage(VCBO) ：	35V
Power Disspation ：	150mW
package ：	SOT-23
Description：	Bipolar Transistors ,KSA1182 ,PNP ,VCEO:30V ,VCBO: 35V ,150mW ,500mA ,SOT-23,F10

KSA1182,CJ,Bipolar Transistors

KSA1182

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

KSA1182,CJ,Bipolar Transistors

KSA1182

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications