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MMBT2222A,CJ,Bipolar Transistors

MMBT2222A

Bipolar Transistors ,MMBT2222A ,NPN ,VCEO:40V ,VCBO: 75V ,300mW ,600mA ,SOT-23

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The image is for reference only, please refer to the drawing for details

Data Sheet： MMBT2222A_SOT-23.pdf

Product number：	QT-TQT644N40VC29020101CJ
Manufacturer Product Number：	MMBT2222A
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	40V
Base Voltage(VCBO) ：	75V
Power Disspation ：	300mW
package ：	SOT-23
Description：	Bipolar Transistors ,MMBT2222A ,NPN ,VCEO:40V ,VCBO: 75V ,300mW ,600mA ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name
Data Sheet	MMBT2222A_SOT-23.pdf

Lead time： Estimated delivery date 2026-03-22

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Unit Price

5

$0.033045

20

$0.023407

100

$0.020653

300

$0.015146

Quantity

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1000

$0.011703

3000

$0.009638

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MOQ：5

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The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

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