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MMBT3904,JD,Bipolar Transistors

MMBT3904

Bipolar Transistors ,MMBT3904 ,NPN ,VCEO:40V ,VCBO: 60V ,200mW ,200mA ,SOT-23,H

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The image is for reference only, please refer to the drawing for details

Data Sheet： MMBT3904.pdf

Product number：	QT-TQT648N40VC02060201JDH
Manufacturer Product Number：	MMBT3904
Manufacturer ：	JD
Series ：	JD-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	40V
Base Voltage(VCBO) ：	60V
Power Disspation ：	200mW
package ：	SOT-23
Description：	Bipolar Transistors ,MMBT3904 ,NPN ,VCEO:40V ,VCBO: 60V ,200mW ,200mA ,SOT-23,H

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	JD
Product Series	JD-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name
Data Sheet	MMBT3904.pdf

Lead time： Estimated delivery date 2026-09-30

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5

$0.010426

20

$0.009017

100

$0.007467

300

$0.006340

Quantity

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1000

$0.005495

3000

$0.004086

12000

$0.003804

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Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

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Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

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Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

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