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MMBT3904,JD,Bipolar Transistors

MMBT3904

Bipolar Transistors ,MMBT3904 ,NPN ,VCEO:40V ,VCBO: 60V ,200mW ,200mA ,SOT-23,L

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The image is for reference only, please refer to the drawing for details

Data Sheet： MMBT3904.pdf

Product number：	QT-TQT648N40VC02060201JDL
Manufacturer Product Number：	MMBT3904
Manufacturer ：	JD
Series ：	JD-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	40V
Base Voltage(VCBO) ：	60V
Power Disspation ：	200mW
package ：	SOT-23
Description：	Bipolar Transistors ,MMBT3904 ,NPN ,VCEO:40V ,VCBO: 60V ,200mW ,200mA ,SOT-23,L

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	JD
Product Series	JD-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name
Data Sheet	MMBT3904.pdf

Lead time： Estimated delivery date 2026-09-09

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5

$0.010426

20

$0.009017

100

$0.007467

300

$0.006340

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1000

$0.005495

3000

$0.004086

12000

$0.003804

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Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

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