MMBT3906_CJ_Bipolar Transistors_PNP_40V_Parameters_ Price_ Spot inventory_ Series Category

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Attribute Name

Attribute Value

Manufacturer

Product Series

CJ-TRANSISTOR

Product Type

Bipolar Transistors

EU RoHS

Compliant(2011/65/EU)

EU REACH

Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	MMBT3906_SOT-23.pdf

File Type

File Name

Data Sheet

MMBT3906_SOT-23.pdf

Lead time： Estimated delivery date 2025-05-12

Quantity

Unit Price

$0.022305

$0.015799

100

$0.013941

300

$0.010223

Quantity

Unit Price

1000

$0.007900

3000

$0.006506

Online Inquiry

* Order quantity ：

MPQ：3000

MOQ： 3000

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Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

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The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

Product number：	QT-TQT651P40VC01060201CJ
Manufacturer Product Number：	MMBT3906
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	40V
Base Voltage(VCBO) ：	40V
Power Disspation ：	200mW
package ：	SOT-23
Description：	Bipolar Transistors ,MMBT3906 ,PNP ,VCEO:40V ,VCBO: 40V ,200mW ,200mA ,SOT-23

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