MMBT4403_CJ_Bipolar Transistors_PNP_40V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	MMBT4403_SOT-23.pdf

Lead time： Estimated delivery date 2026-01-20

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SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

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What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

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Product number：	QT-TQT654P40VC01020101CJ
Manufacturer Product Number：	MMBT4403
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	40V
Base Voltage(VCBO) ：	40V
Power Disspation ：	300mW
package ：	SOT-23
Description：	Bipolar Transistors ,MMBT4403 ,PNP ,VCEO:40V ,VCBO: 40V ,300mW ,600mA ,SOT-23

MMBT4403,CJ,Bipolar Transistors

MMBT4403

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MMBT4403,CJ,Bipolar Transistors

MMBT4403

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