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MMBT5401,CJ,Bipolar Transistors

MMBT5401

Bipolar Transistors ,MMBT5401 ,PNP ,VCEO:150V ,VCBO: 160V ,300mW ,600mA ,SOT-23

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The image is for reference only, please refer to the drawing for details

Data Sheet： MMBT5401_SOT-23.pdf

Product number：	QT-TQT655P150C08020101CJ
Manufacturer Product Number：	MMBT5401
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	150V
Base Voltage(VCBO) ：	160V
Power Disspation ：	300mW
package ：	SOT-23
Description：	Bipolar Transistors ,MMBT5401 ,PNP ,VCEO:150V ,VCBO: 160V ,300mW ,600mA ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name
Data Sheet	MMBT5401_SOT-23.pdf

Lead time： Estimated delivery date 2026-01-21

Quantity

Unit Price

5

$0.031392

20

$0.022236

100

$0.019620

300

$0.014388

Quantity

Unit Price

1000

$0.011118

3000

$0.009156

* Order quantity ：

MPQ：3000

MOQ： 3000

MOQ：5

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Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

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The Development Trend of High Voltage SiC MOSFET The research on high-voltage SiC MOSFETs is gradually deepening, mainly focusing on the design, preparation, and detection of high-voltage SiC MOSFETs. In the past two years, Sic Mosfet has broken through the peak tunneling voltage of 2600V, with crystal surface insulation characteristics as high as 200MV • cm-1, and static performance reaching 500A/1700V for a single chip in a half bridge topology. It can also support constant current and constant voltage regulator operation. In addition, there are SiC Mosfets designed for solid-state dye solar energy to meet the needs of these applications.

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