MMBTA06_CJ_Bipolar Transistors_NPN_80V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	MMBTA06_SOT-23.pdf

Lead time： Estimated delivery date 2026-07-02

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Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

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Product number：	QT-TQT660N80VC20020501CJ
Manufacturer Product Number：	MMBTA06
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	80V
Base Voltage(VCBO) ：	80V
Power Disspation ：	300mW
package ：	SOT-23
Description：	Bipolar Transistors ,MMBTA06 ,NPN ,VCEO:80V ,VCBO: 80V ,300mW ,500mA ,SOT-23

MMBTA06,CJ,Bipolar Transistors

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