MMST4401_CJ_Bipolar Transistors_NPN_40V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	MMST4401_SOT-323

Lead time： Estimated delivery date 2026-04-20

Online Inquiry

Product Recommendation Maker Dynamics Applications

CJ201NL

Bipolar Transistors ,CJ201NL ,NPN ,VCEO:20V ,VCBO: 30V ,300mW ,1000mA ,SOT-23

$0.000000 More
MMBTA05

Bipolar Transistors ,MMBTA05 ,NPN ,VCEO:60V ,VCBO: 60V ,300mW ,500mA ,SOT-23

$0.000000 More
D882

Bipolar Transistors ,D882 ,NPN ,VCEO:30V ,VCBO: 40V ,1500mW ,30000mA ,SOT-223,GR

$0.000000 More
FMMT591

Bipolar Transistors ,FMMT591 ,PNP ,VCEO:60V ,VCBO: 80V ,250mW ,1000mA ,SOT-23

$0.000000 More
2SC2412

Bipolar Transistors ,2SC2412 ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,150mA ,SOT-23,BQ

$0.000000 More
2SD602A

Bipolar Transistors ,2SD602A ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,500mA ,SOT-23,XR

$0.000000 More
BC858

Bipolar Transistors ,BC858 ,PNP ,VCEO:30V ,VCBO: 30V ,200mW ,100mA ,SOT-23,3J

$0.000000 More
MMSTA56

Bipolar Transistors ,MMSTA56 ,PNP ,VCEO:80V ,VCBO: 80V ,200mW ,500mA ,SOT-323

$0.000000 More
2SA1611

Bipolar Transistors ,2SA1611 ,PNP ,VCEO:50V ,VCBO: 60V ,150mW ,100mA ,SOT-323,M6

$0.000000 More
PZT2222A

Bipolar Transistors ,PZT2222A ,NPN ,VCEO:40V ,VCBO: 75V ,1000mW ,600mA ,SOT-223

$0.000000 More
KTC4075

Bipolar Transistors ,KTC4075 ,NPN ,VCEO:50V ,VCBO: 60V ,100mW ,150mA ,SOT-23,LGR

$0.000000 More
BC857

Bipolar Transistors ,BC857 ,PNP ,VCEO:45V ,VCBO: 50V ,200mW ,100mA ,SOT-23,3F

$0.000000 More
BC818

Bipolar Transistors ,BC818 ,NPN ,VCEO:25V ,VCBO: 30V ,300mW ,500mA ,SOT-23,6E

$0.000000 More
2SC1623

Bipolar Transistors ,2SC1623 ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-23

$0.000000 More
B772

Bipolar Transistors ,B772 ,PNP ,VCEO:30V ,VCBO: 40V ,1250mW ,3000mA ,SOT-223,Y

$0.000000 More
CZT31C

Bipolar Transistors ,CZT31C ,NPN ,VCEO:100V ,VCBO: 100V ,1000mW ,3000mA ,SOT-223

$0.000000 More
BC856W

Bipolar Transistors ,BC856W ,PNP ,VCEO:65V ,VCBO: 80V ,150mW ,100mA ,SOT-323,3A

$0.000000 More
BF821

Bipolar Transistors ,BF821 ,PNP ,VCEO:300V ,VCBO: 300V ,250mW ,50mA ,SOT-23

$0.000000 More
PZTA42

Bipolar Transistors ,PZTA42 ,NPN ,VCEO:300V ,VCBO: 300V ,1000mW ,200mA ,SOT-223

$0.000000 More
2SD602

Bipolar Transistors ,2SD602 ,NPN ,VCEO:25V ,VCBO: 30V ,200mW ,500mA ,SOT-23,WQ1

$0.000000 More

Product Recommendation Maker Dynamics Applications

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

Reverse Recovery Current and Electrical Test Item Vgs of Silicon Carbide (SiC) MOSFET The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process.

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

The Development Trend of High Voltage SiC MOSFET The research on high-voltage SiC MOSFETs is gradually deepening, mainly focusing on the design, preparation, and detection of high-voltage SiC MOSFETs. In the past two years, Sic Mosfet has broken through the peak tunneling voltage of 2600V, with crystal surface insulation characteristics as high as 200MV • cm-1, and static performance reaching 500A/1700V for a single chip in a half bridge topology. It can also support constant current and constant voltage regulator operation. In addition, there are SiC Mosfets designed for solid-state dye solar energy to meet the needs of these applications.

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

Product number：	QT-TQT674N40VC02060102CJ
Manufacturer Product Number：	MMST4401
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	40V
Base Voltage(VCBO) ：	60V
Power Disspation ：	200mW
package ：	SOT-323
Description：	Bipolar Transistors ,MMST4401 ,NPN ,VCEO:40V ,VCBO: 60V ,200mW ,600mA ,SOT-323

MMST4401,CJ,Bipolar Transistors

MMST4401

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

MMST4401,CJ,Bipolar Transistors

MMST4401

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications