PZTA44_CJ_Bipolar Transistors_NPN_400V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	PZTA44_SOT-223.pdf

Lead time： Estimated delivery date 2026-06-30

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Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

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What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

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Product number：	QT-TQT714N400C36050219CJ
Manufacturer Product Number：	PZTA44
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	400V
Base Voltage(VCBO) ：	500V
Power Disspation ：	1000mW
package ：	SOT-223
Description：	Bipolar Transistors ,PZTA44 ,NPN ,VCEO:400V ,VCBO: 500V ,1000mW ,200mA ,SOT-223

PZTA44,CJ,Bipolar Transistors

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PZTA44,CJ,Bipolar Transistors

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