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SS8550,CJ,Bipolar Transistors

SS8550

Bipolar Transistors ,SS8550 ,PNP ,VCEO:25V ,VCBO: 40V ,300mW ,1500mA ,SOT-23

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The image is for reference only, please refer to the drawing for details

Data Sheet： SS8550_SOT-23.pdf

Product number：	QT-TQT730P25VC01020701CJ
Manufacturer Product Number：	SS8550
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	25V
Base Voltage(VCBO) ：	40V
Power Disspation ：	300mW
package ：	SOT-23
Description：	Bipolar Transistors ,SS8550 ,PNP ,VCEO:25V ,VCBO: 40V ,300mW ,1500mA ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

S8550

Bipolar Transistors ,S8550 ,PNP ,VCEO:25V ,VCBO: 40V ,300mW ,500mA ,SOT-23

$0.000000 More
S9012

Bipolar Transistors ,S9012 ,PNP ,VCEO:25V ,VCBO: 40V ,300mW ,500mA ,SOT-23

$0.000000 More

File

File Type	File Name
Data Sheet	SS8550_SOT-23.pdf

Lead time： Estimated delivery date 2026-10-11

Quantity

Unit Price

5

$0.003139

20

$0.002224

100

$0.001962

300

$0.001439

Quantity

Unit Price

1000

$0.001112

3000

$0.000916

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MPQ：3000

MOQ： 3000

MOQ：5

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Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

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What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

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