SS8050_CJ_Bipolar Transistors_NPN_25V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	SS8050_SOT-323
	SS8050_SOT-23.pdf

Lead time： Estimated delivery date 2026-09-26

Online Inquiry

Product Recommendation Maker Dynamics Applications

BC848W

Bipolar Transistors ,BC848W ,NPN ,VCEO:30V ,VCBO: 30V ,150mW ,100mA ,SOT-323,1K

$0.000000 More
2SC2411

Bipolar Transistors ,2SC2411 ,NPN ,VCEO:32V ,VCBO: 40V ,200mW ,500mA ,SOT-23

$0.000000 More
2SD0602A

Bipolar Transistors ,2SD0602A ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,500mA ,SOT-23,XR

$0.000000 More
BC818

Bipolar Transistors ,BC818 ,NPN ,VCEO:25V ,VCBO: 30V ,300mW ,500mA ,SOT-23,6F

$0.000000 More
2SC1623

Bipolar Transistors ,2SC1623 ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-323,L4

$0.000000 More
MMBTA42

Bipolar Transistors ,MMBTA42 ,NPN ,VCEO:300V ,VCBO: 300V ,350mW ,300mA ,SOT-23

$0.016144 More
2SA1298

Bipolar Transistors ,2SA1298 ,PNP ,VCEO:30V ,VCBO: 35V ,200mW ,800mA ,SOT-23.IO

$0.000000 More
BC846

Bipolar Transistors ,BC846 ,NPN ,VCEO:65V ,VCBO: 80V ,200mW ,100mA ,SOT-23,1A

$0.000000 More
2SC2712

Bipolar Transistors ,2SC2712 ,NPN ,VCEO:50V ,VCBO: 60V ,150mW ,150mA ,SOT-23,LL

$0.000000 More
2SC4618

Bipolar Transistors ,2SC4618 ,NPN ,VCEO:25V ,VCBO: 40V ,150mW ,50mA ,SOT-523,AP

$0.000000 More
2SC5585

Bipolar Transistors ,2SC5585 ,NPN ,VCEO:12V ,VCBO: 15V ,150mW ,500mA ,SOT-523

$0.000000 More
BC847

Bipolar Transistors ,BC847 ,NPN ,VCEO:45V ,VCBO: 50V ,200mW ,100mA ,SOT-23,1F

$0.000000 More
2SC1623

Bipolar Transistors ,2SC1623 ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-23

$0.000000 More
2SC4098

Bipolar Transistors ,2SC4098 ,NPN ,VCEO:25V ,VCBO: 40V ,200mW ,50mA ,SOT-323,AQ

$0.000000 More
BCW68

Bipolar Transistors ,BCW68 ,PNP ,VCEO:45V ,VCBO: 60V ,330mW ,800mA ,SOT-23,DG

$0.000000 More
2SC2859

Bipolar Transistors ,2SC2859 ,NPN ,VCEO:30V ,VCBO: 35V ,150mW ,500mA ,SOT-23,WO

$0.000000 More
KTC3879

Bipolar Transistors ,KTC3879 ,NPN ,VCEO:30V ,VCBO: 35V ,150mW ,50mA ,SOT-23,RR

$0.000000 More
BCP68

Bipolar Transistors ,BCP68 ,NPN ,VCEO:20V ,VCBO: 32V ,1000mW ,1000mA ,SOT-223,16

$0.000000 More
BF820

Bipolar Transistors ,BF820 ,NPN ,VCEO:300V ,VCBO: 300V ,250mW ,50mA ,SOT-23

$0.000000 More
CZT5551

Bipolar Transistors ,CZT5551 ,NPN ,VCEO:160V ,VCBO: 180V ,1000mW ,600mA ,SOT-223

$0.000000 More

Product Recommendation Maker Dynamics Applications

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

The Development Trend of High Voltage SiC MOSFET The research on high-voltage SiC MOSFETs is gradually deepening, mainly focusing on the design, preparation, and detection of high-voltage SiC MOSFETs. In the past two years, Sic Mosfet has broken through the peak tunneling voltage of 2600V, with crystal surface insulation characteristics as high as 200MV • cm-1, and static performance reaching 500A/1700V for a single chip in a half bridge topology. It can also support constant current and constant voltage regulator operation. In addition, there are SiC Mosfets designed for solid-state dye solar energy to meet the needs of these applications.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

What are the differences between gallium nitride (GaN) and silicon carbide (SiC)? Gallium nitride (GaN) and silicon carbide (SiC) power transistors, two types of compound semiconductor devices, have emerged as solutions. These devices compete with long-life silicon power lateral diffusion metal oxide semiconductor (LDMOS) MOSFETs and super junction MOSFETs. GaN and SiC devices are similar in some aspects, but there are also significant differences.

What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

Product number：	QT-TQT770N25VC01020701CJ
Manufacturer Product Number：	SS8050
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	25V
Base Voltage(VCBO) ：	40V
Power Disspation ：	300mW
package ：	SOT-23
Description：	Bipolar Transistors ,SS8050 ,NPN ,VCEO:25V ,VCBO: 40V ,300mW ,1500mA ,SOT-23

SS8050,CJ,Bipolar Transistors

SS8050

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

SS8050,CJ,Bipolar Transistors

SS8050

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications