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SMF5.0A,CJ,TVS Diodes

SMF5.0A

UNI TVS Diodes ,200W ,VRWM(V):5V ,VC@IPP:9.2V ,IPP-21.7A ,IR:800μA ,SOD-123FL

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The image is for reference only, please refer to the drawing for details

Data Sheet： SMF5.0CA_SOD-123FL

Product number：	TVS1-2J5V00C02L54M543FLCJ
Manufacturer Product Number：	SMF5.0A
Manufacturer ：	CJ
Series ：	CJ-SMF
Product Type ：	TVS Diodes
Power(W) ：	200W
Reverse Stand-Off Voltage VRWM (V) ：	5V
Max Clamping Voltage VC @IPP (V) ：	9.2V
Max Peak Pulse Current IPP (A) ：	21.7A
Package ：	SOD-123FL
Description：	UNI TVS Diodes ,200W ,VRWM(V):5V ,VC@IPP:9.2V ,IPP-21.7A ,IR:800μA ,SOD-123FL

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-SMF
Product Type	TVS Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

SMF5.0CA

BI TVS Diodes ,200W ,VRWM(V):5V ,VC@IPP:9.2V ,IPP-21.7A ,IR:400μA ,SOD-123FL

$0.000000 More
SMF5.0CA

BI TVS Diodes ,200W ,VRWM(V):5V ,VC@IPP:9.2V ,IPP-21.7A ,IR:800μA ,SOD-123FL

$0.000000 More

File

File Type	File Name
Data Sheet	SMF5.0CA_SOD-123FL

Lead time： Estimated delivery date 2026-03-15

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Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

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