SMF6.5A_JD_TVS Diodes_200W_6.5V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	JD
Product Series	JD-TVSSMF
Product Type	TVS Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	JD_SMF.pdf

Lead time： Estimated delivery date 2026-04-01

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What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

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Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

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Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Product number：	TVS1-2J6V50C06L56M513FLJD
Manufacturer Product Number：	SMF6.5A
Manufacturer ：	JD
Series ：	JD-SMF
Product Type ：	TVS Diodes
Power(W) ：	200W
Reverse Stand-Off Voltage VRWM (V) ：	6.5V
Max Clamping Voltage VC @IPP (V) ：	11.2V
Max Peak Pulse Current IPP (A) ：	17.9A
Package ：	SOD-123FL
Description：	UNI TVS Diodes ,200W ,VRWM(V):6.5V ,VC@IPP:11.2V ,IPP-17.9A ,IR:250μA ,SOD-123FL

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