SMF5.0CA_CJ_TVS Diodes_200W_5V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-SMF
Product Type	TVS Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	SMF5.0CA_SOD-123FL

Lead time： Estimated delivery date 2026-09-07

Online Inquiry

Product Recommendation Maker Dynamics Applications

SMF5.0A

UNI TVS Diodes ,200W ,VRWM(V):5V ,VC@IPP:9.2V ,IPP-21.7A ,IR:800μA ,SOD-123FL

$0.000000 More
SMAJ90CA

BI TVS Diodes ,400W ,VRWM(V):90V ,VC@IPP:146V ,IPP-2.74A ,IR:5μA ,SMA/DO-214AC ,SOCAY-SMAJ

$0.026502 More
SMF8.0A

UNI TVS Diodes ,200W ,VRWM(V):8V ,VC@IPP:13.6V ,IPP-14.71A ,IR:25μA ,SMF ,SOCAY-SMF

$0.018520 More
4.0SMF16CA

BI TVS Diodes ,400W ,VRWM(V):16V ,VC@IPP:26V ,IPP-15.38A ,IR:1μA ,SOD-123FL ,16CL

$0.000000 More
SMAJ19A

UNI TVS Diodes ,400W ,VRWM(V):19V ,VC@IPP:30.8V ,IPP-13A ,IR:5μA ,SMA/DO-214AC ,SOCAY-SMAJ

$0.026502 More
TPSMEJ33CA

BI TVS Diodes ,5000W ,VRWM(V):33V ,VC@IPP:53.3V ,IPP-94A ,IR:5μA ,SMC/DO-214AB ,SOCAY-TPSMEJ

$0.000000 More
SMAJ130A

UNI TVS Diodes ,400W ,VRWM(V):130V ,VC@IPP:209V ,IPP-1.91A ,IR:5μA ,SMA/DO-214AC ,SOCAY-SMAJ

$0.026502 More
TPSMEJ36A

UNI TVS Diodes ,5000W ,VRWM(V):36V ,VC@IPP:58.1V ,IPP-86A ,IR:5μA ,SMC/DO-214AB ,SOCAY-TPSMEJ

$0.000000 More
SMF5.0A

UNI TVS Diodes ,200W ,VRWM(V):5V ,VC@IPP:9.2V ,IPP-21.74A ,IR:400μA ,SMF ,SOCAY-SMF

$0.018520 More
SMAJ250CA

BI TVS Diodes ,400W ,VRWM(V):250V ,VC@IPP:405V ,IPP-0.99A(990mA) ,IR:5μA ,SMA/DO-214AC ,SOCAY-SMAJ

$0.046378 More
SMAJ15A

UNI TVS Diodes ,400W ,VRWM(V):15V ,VC@IPP:24.4V ,IPP-16.39A ,IR:5μA ,SMA/DO-214AC ,SOCAY-SMAJ

$0.026502 More
SMF200CA

BI TVS Diodes ,200W ,VRWM(V):200V ,VC@IPP:324V ,IPP-0.62A(620mA) ,IR:1μA ,SMF ,SOCAY-SMF

$0.033337 More
SMF7.5CA

BI TVS Diodes ,200W ,VRWM(V):7.5V ,VC@IPP:12.9V ,IPP-15.5A ,IR:50μA ,SMF ,SOCAY-SMF

$0.018520 More
SM8S36AG

UNI TVS Diodes ,6600W ,VRWM(V):36V ,VC@IPP:58.1V ,- ,IR:10μA ,DO-218AB ,SOCAY-SM8S

$0.618369 More
SMF36A

UNI TVS Diodes ,200W ,VRWM(V):36V ,VC@IPP:58.1V ,IPP-3.44A ,IR:1μA ,SMF ,SOCAY-SMF

$0.018520 More
SMF85A

UNI TVS Diodes ,200W ,VRWM(V):85V ,VC@IPP:137V ,IPP-1.46A ,IR:1μA ,SMF ,SOCAY-SMF

$0.025466 More
SMF78CA

BI TVS Diodes ,200W ,VRWM(V):78V ,VC@IPP:126V ,IPP-1.59A ,IR:1μA ,SMF ,SOCAY-SMF

$0.025466 More
SMAJ13CA

UNI TVS Diodes ,400W ,VRWM(V):13V ,VC@IPP:21.5V ,IPP-18.6A ,IR:5μA ,SMA/DO-214AC ,SOCAY-SMAJ

$0.026502 More
SMF12A

UNI TVS Diodes ,200W ,VRWM(V):12V ,VC@IPP:19.9V ,IPP-10.05A ,IR:2.5μA ,SMF ,SOCAY-SMF

$0.018520 More
SMAJ20CA

BI TVS Diodes ,400W ,VRWM(V):20V ,VC@IPP:32.4V ,IPP-12.35A ,IR:1μA ,SMA/DO-214AC

$0.000000 More

Product Recommendation Maker Dynamics Applications

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

Reverse Recovery Current and Electrical Test Item Vgs of Silicon Carbide (SiC) MOSFET The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process.

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

Product number：	TVS2-2J5V00C02L54M543FLCJ
Manufacturer Product Number：	SMF5.0CA
Manufacturer ：	CJ
Series ：	CJ-SMF
Product Type ：	TVS Diodes
Power(W) ：	200W
Reverse Stand-Off Voltage VRWM (V) ：	5V
Max Clamping Voltage VC @IPP (V) ：	9.2V
Max Peak Pulse Current IPP (A) ：	21.7A
Package ：	SOD-123FL
Description：	BI TVS Diodes ,200W ,VRWM(V):5V ,VC@IPP:9.2V ,IPP-21.7A ,IR:800μA ,SOD-123FL

SMF5.0CA,CJ,TVS Diodes

SMF5.0CA

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

SMF5.0CA,CJ,TVS Diodes

SMF5.0CA

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications