SMAJ20CA_JD_TVS Diodes_400W_20V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	JD
Product Series	JD-SMAJ
Product Type	TVS Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-03-13

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SMF6.0CA

BI TVS Diodes ,200W ,VRWM(V):6V ,VC@IPP:10.3V ,IPP-19.4A ,IR:400μA ,SOD-123FL

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SMF5.0A

UNI TVS Diodes ,200W ,VRWM(V):5V ,VC@IPP:9.2V ,IPP-21.7A ,IR:400μA ,SOD-123FL,AE

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SMF5.0CA

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SMF6.0A

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SMF6.5CA

BI TVS Diodes ,200W ,VRWM(V):6.5V ,VC@IPP:11.2V ,IPP-17.9A ,IR:250μA ,SOD-123FL

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SMF6.5A

UNI TVS Diodes ,200W ,VRWM(V):6.5V ,VC@IPP:11.2V ,IPP-17.9A ,IR:250μA ,SOD-123FL

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TPSMCJ24CA

BI TVS Diodes ,1500W ,VRWM(V):24V ,VC@IPP:38.9V ,IPP-38.56A ,IR:1μA ,SMC/DO-214AB ,SOCAY-TPSMCJ

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SMAJ170A

UNI TVS Diodes ,400W ,VRWM(V):170V ,VC@IPP:275V ,IPP-1.45A ,IR:5μA ,SMA/DO-214AC ,SOCAY-SMAJ

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4.0SMF48CA

BI TVS Diodes ,400W ,VRWM(V):48V ,VC@IPP:77.4V ,IPP-5.16A ,IR:1μA ,SOD-123FL ,48CL

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SMF18CA

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SM8S36AG

UNI TVS Diodes ,6600W ,VRWM(V):36V ,VC@IPP:58.1V ,IPP-114A ,IR:5μA ,DO-218AB ,SOCAY-SM8S

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SMF58CA

BI TVS Diodes ,200W ,VRWM(V):58V ,VC@IPP:93.6V ,IPP-2.14A ,IR:1μA ,SMF ,SOCAY-SMF

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SMAJ64CA

BI TVS Diodes ,400W ,VRWM(V):64V ,VC@IPP:103V ,IPP-3.88A ,IR:5μA ,SMA/DO-214AC ,SOCAY-SMAJ

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SMF220A

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SMAJ19CA

BI TVS Diodes ,400W ,VRWM(V):19V ,VC@IPP:30.8V ,IPP-13A ,IR:5μA ,SMA/DO-214AC ,SOCAY-SMAJ

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SMF150A

UNI TVS Diodes ,200W ,VRWM(V):150V ,VC@IPP:243V ,IPP-0.82A(820mA) ,IR:1μA ,SMF ,SOCAY-SMF

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4.0SMF10CA

BI TVS Diodes ,400W ,VRWM(V):10V ,VC@IPP:17V ,IPP-23.52A ,IR:2.5μA ,SOD-123FL ,10CL

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SMAJ440A

UNI TVS Diodes ,400W ,VRWM(V):440V ,VC@IPP:713V ,IPP-0.56A(560mA) ,IR:5μA ,SMA/DO-214AC ,SOCAY-SMAJ

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SMF10A

UNI TVS Diodes ,200W ,VRWM(V):10V ,VC@IPP:17V ,IPP-11.76A ,IR:2.5μA ,SMF ,SOCAY-SMF

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SMAJ36CA

BI TVS Diodes ,400W ,VRWM(V):36V ,VC@IPP:58.1V ,IPP-6.88A ,IR:5μA ,SMA/DO-214AC ,SOCAY-SMAJ

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Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Product number：	TVS2-2N20V0C39G19M01SMAJD
Manufacturer Product Number：	SMAJ20CA
Manufacturer ：	JD
Series ：	JD-SMAJ
Product Type ：	TVS Diodes
Power(W) ：	400W
Reverse Stand-Off Voltage VRWM (V) ：	20V
Max Clamping Voltage VC @IPP (V) ：	32.4V
Max Peak Pulse Current IPP (A) ：	12.35A
Package ：	SMA/DO-214AC
Description：	BI TVS Diodes ,400W ,VRWM(V):20V ,VC@IPP:32.4V ,IPP-12.35A ,IR:1μA ,SMA/DO-214AC

SMAJ20CA,JD,TVS Diodes

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