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BAP50-03,CJ,PIN Diodes

BAP50-03

PIN Diodes BAP50-03 PD:200mW IF:50mA VR:50V SOT-323

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The image is for reference only, please refer to the drawing for details

Data Sheet： BAP50-03.pdf

Product number：	D08-BAP50-03-CJ
Manufacturer Product Number：	BAP50-03
Manufacturer ：	CJ
Series ：	CJ-PIN Diodes
Product Type ：	PIN Diodes
Package ：	SOD-323
Part Number ：	BAP50-03
Power Dissipation (PD) ：	PD:200mW
Forward voltage (IF) ：	IO:50mA(0.05A)
reverse voltage (VR) ：	VR:50V
Description：	PIN Diodes BAP50-03 PD:200mW IF:50mA VR:50V SOT-323

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-PIN Diodes
Product Type	PIN Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File

File Type	File Name
Data Sheet	BAP50-03.pdf

Lead time： Estimated delivery date 2025-05-08

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

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