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BAP51-02,CJ,PIN Diodes

BAP51-02

PIN Diodes BAP51-02 PD:150mW IF:50mA VR:50V SOT-323

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The image is for reference only, please refer to the drawing for details

Product number：	D08-BAP51-02-CJ
Manufacturer Product Number：	BAP51-02
Manufacturer ：	CJ
Series ：	CJ-PIN Diodes
Product Type ：	PIN Diodes
Package ：	SOT-323
Part Number ：	BAP51-02
Power Dissipation (PD) ：	PD:150mW
Forward voltage (IF) ：	IO:50mA(0.05A)
reverse voltage (VR) ：	VR:50V
Description：	PIN Diodes BAP51-02 PD:150mW IF:50mA VR:50V SOT-323

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-PIN Diodes
Product Type	PIN Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

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Lead time： Estimated delivery date 2025-02-19

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Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

Silicon carbide (SiC) diodes are diodes made from silicon carbide as raw material. Silicon carbide diode, claimed to have zero reverse recovery time, is a dedicated boost diode for high-efficiency PFC boost circuits.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

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