Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.
The development prospects of silicon carbide substrate are as follows:
1. Continuously improving preparation technology: With the continuous advancement of silicon carbide material preparation technology, the quality and size of silicon carbide substrate sheets have been significantly improved. At present, the preparation of silicon carbide substrate sheets with a diameter of 8 inches has been achieved, and the production of 12 inches is gradually being promoted, which will further promote its industrialization process.
2. Increasing demand: Silicon carbide substrate sheets are widely used in fields such as power electronics, automotive electronics, communication equipment, solar inverters, wind turbines, etc. As these markets continue to expand, the demand for silicon carbide substrate sheets will also continue to increase.
3. Continuous innovation research: Currently, researchers are exploring new techniques and optimization methods for preparing silicon carbide substrate sheets, such as improving the surface quality of substrate sheets by introducing guiding layers and nano pressure oxygen treatment, as well as developing higher quality, larger size, and lower cost substrate sheets.
4. Market competition pressure: Currently, there are multiple players in the field of silicon carbide substrate preparation, mainly including SUMITOMO from Japan, Cree from the United States, Fraunhofer from Germany, and Donghua Testing from China. The market competition pressure is high, but it also drives them to continuously improve product quality and innovation capabilities to meet customer needs.
In summary, with the continuous expansion of the silicon carbide power device market and advances in technology, silicon carbide substrate sheets have broad development prospects and will continue to maintain rapid growth in the coming years.