SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:
SiC SBD: SiC SBD (SiC Bipolar Device) is a polarized silicon carbon bipolar device constructed by using silicon carbon and silicon crystals as component materials. It consists of two forward and reverse bipolar switches, each with an independent gate, drain, and collector. It belongs to pressure controllable components and has reverse current protection, emission, and suppression functions. Due to its high mobility, SiC SBD can quickly control voltage drop, thereby enabling insulated transmission components to have a high data transmission rate.
SiC MOSFET: SiC MOSFET (SiC field-effect transistor) is a type of field-effect transistor that has extremely low transient delay and loss, and can achieve fast switching in high frequency and resonant cycles. It can serve as the foundation for power components, used in electronic systems such as high-frequency power conversion, laser lighting, infrared heating, aircraft motors, high-speed cameras, and aviation power systems.
Advantages in application:
SiC SBD: It has high temperature performance and can work in high-temperature environments, which makes it suitable for application in high-tech electronic devices, such as aircraft electronic circuits. In addition, SIC SBD has good conductivity, which can reduce power consumption caused by insufficient heat dissipation.
SiC MOSFET: It has the advantages of low disturbance, fast climb time, low loss, and high accuracy, and can be used for high-frequency electronic devices.