Current research status abroad
Research on high-voltage SiC MOSFETs is gradually deepening abroad, mainly focusing on the design, preparation, and testing of high-voltage SiC MOSFETs. In the past two years, Sic Mosfet has broken through the peak tunneling voltage of 2600V, with crystal surface insulation characteristics as high as 200MV • cm-1, and static performance reaching 500A/1700V for a single chip in a half bridge topology. It can also support constant current and constant voltage regulator operation. In addition, there are SiC Mosfets designed for solid-state dye solar energy to meet the needs of these applications.
Current research status in China
The research on high-voltage SiC MOSFETs in China is still in its infancy, mainly focusing on lattice layout, design principles, preparation techniques, and other aspects. In order to meet the needs of different application scenarios, researchers have explored various design techniques, such as multi cavity design parallel structure methods, to improve reliability and peak stack voltage, in order to develop high-power modules and power modules. Researchers have also attempted to develop single-chip MOSFET structures for 500V and 650V, providing technical support for more power driven applications.
expectation
In the future, research on Sic MOSFETs will focus on the following aspects:
(1) Improve the reliability of the design, including increasing the self return current, effectively controlling the return transistor, and reducing visible delusions;
(2) Increasing the peak topology voltage is mainly achieved through bipolar topology;
(3) Fine preparation technology, especially the cross opening hollow MOSFET structure, to achieve high peak stacking voltage and high performance;
(4) Develop high-power modules, mainly for motors and new energy drive systems;
(5) Develop higher voltage MOSFETs to meet the demand for higher rated voltages in power applications;
(6) Optimize the design of the driving circuit to improve the driving capability;
(7) Improve the melting performance of MOSFETs to achieve reliable circuit breaker protection;
(8) Improve security performance to ensure user safety. In summary, in-depth exploration of relevant research can provide effective technical support for the development of more advanced MOSFETs in power applications.