Rigid demand for charging piles, deepening penetration of silicon carbide applications
In the field of semiconductor materials, silicon carbide and gallium nitride are undoubtedly the hottest stars at present. Among them, silicon carbide has characteristics such as high voltage, high frequency, and high efficiency. Its resistance to high frequency and high temperature is 10 times that of equivalent silicon devices. Therefore, silicon carbide has significant advantages over traditional silicon devices in applications such as photovoltaic inverters, motor controllers for new energy vehicles, and charging stations.
With the rise of new energy vehicles and the increasing demand for applications, silicon carbide has truly been pushed to the forefront. For new energy electric vehicles, IGBT is currently the main power module used in vehicles. It is understood that IGBT accounts for nearly 10% of the total cost in an electric vehicle. However, power devices made of silicon carbide materials have better performance in new energy vehicles, such as Tesla, which currently ranks first in global electric vehicle shipments. Its Model series models are the first in the industry to use silicon carbide power devices instead of IGBTs, thus having superior electrical performance compared to competitors and achieving longer range compared to competitors with equivalent battery capacity.
However, currently, the application of silicon carbide power devices in new energy vehicles is still limited, mainly due to cost constraints. However, due to its high usage rate and mainly used in parking lot scenarios, small size and high reliability have become rigid requirements for charging piles. Therefore, silicon carbide power devices that can provide high power density and high temperature resistance naturally become the best choice for electric vehicle charging stations.
Silicon carbide MOSFET is a wide bandgap high-speed device that can achieve high voltage, high current, and high-speed switching, bringing revolutionary changes to related applications. DC charging piles are one of them, and silicon carbide has further promoted the development of DC charging piles
On the other hand, although the cost of silicon carbide is higher than traditional silicon devices, in the application of charging stations, the increase in power density can actually reduce the system cost of charging stations. Charging stations are infrastructure with complex cost structures, but urban space costs are one of the main aspects. Therefore, the power density of charging stations is crucial, and silicon carbide devices are the key to achieving high power density. Silicon carbide devices, as high-voltage, high-speed, and high current devices, simplify the circuit structure of DC pile charging modules, improve unit power levels, and significantly increase power density. This paves the way for reducing the system cost of charging piles
Although silicon carbide has a high cost, whether its advantages can offset the cost disadvantage depends on its compatibility with the usage scenario. Specifically, in the urban scenarios where charging stations are most widely used, the location is generally chosen in bustling areas with expensive rent, thus requiring high volume. At present, electric vehicles that support fast charging can achieve a charging power of up to 150kW, and Porsche's recently launched electric sports car Taycan has increased the fast charging power to 250kW. It can be imagined that to build an electric vehicle charging station with multiple fast charging stations, it would require a power output of millions of watts, equivalent to the electricity consumption of a residential area.
Although the penetration rate of silicon carbide power devices in the charging pile market is not too high at present, as downstream car companies such as Tesla begin to promote silicon carbide solutions in large quantities, domestic manufacturers will also quickly follow suit. Represented by BYD, vehicle manufacturers are beginning to comprehensively layout and will increasingly use silicon carbide devices in charging stations and vehicles. According to CASA's prediction, due to the increasing demand for charging speed in electric vehicles, the demand for DC charging stations will further increase. Therefore, the penetration of silicon carbide in the charging station field will be faster than in the entire vehicle market.
Faced with favorable new infrastructure policies, silicon carbide has enormous market potential in the fields of new energy vehicles and charging piles. For domestic enterprises in the field of power devices, seizing the trend of new technologies is certainly important, but it does not mean rapidly expanding production capacity. In contrast, it is more important to focus on the real market demand, deeply cultivate segmented fields, and improve product performance. When the scale of the enterprise is sufficient, controlling cost reduction is the key to having greater competitiveness in a rapidly growing market.
Wuxi Guojing Micro Semiconductor Technology Co., Ltd. is a high-tech innovative enterprise engaged in the research and industrialization of wide bandgap third-generation semiconductor silicon carbide SiC power devices, gallium nitride GaN optoelectronic devices, and conventional integrated circuits. It is engaged in the design, production, and sales of silicon carbide field-effect transistors, silicon carbide Schottky diodes, GaN optocouplers relays, microcontroller integrated circuits, and other product chips, and provides overall product design and supporting services. Its headquarters is located in Wuxi High tech Development Zone, Jiangsu Province, and it has research and development centers, sales service support centers, and offices in Hangzhou, Shenzhen, and Hong Kong.
The company has leading research and development capabilities in China, focusing on providing customers with high-performance, low-power, low resistance, and stable quality silicon carbide high and low power devices and optoelectronic integrated circuit products. At the same time, it provides one-stop application solutions and on-site technical support services, enabling customers to have excellent system performance, flexibility, reliability, and cost competitiveness.
The company's silicon carbide power devices cover series such as 650V/2A-100A, 1200V/2A-90A, 1700V/5A-80A, etc. The products have been put into mass production and can fully benchmark the advanced quality and level of international brand peers. We have successively launched full current voltage level silicon carbide Schottky diodes and silicon carbide MOSFET series products that have passed industrial and automotive reliability tests, with performance reaching the international advanced level. They are applied in fields such as solar inverters, new energy electric vehicles and charging piles, smart grids, high-frequency welding, rail transportation, industrial control special power supplies, and national defense and military industries. Due to its characteristics of high-speed switching and low on resistance, it can exhibit excellent electrical characteristics even under high temperature conditions, significantly reducing switching losses, making components smaller and lighter, more efficient, and improving overall system reliability. It can increase the driving range of electric vehicles by 10%, reduce the weight of the entire vehicle by about 5%, and achieve safe and stable operation in high-temperature environments with designed charging stations.
Especially in the field of high and low voltage optocoupler semiconductor technology, we have an industry-leading R&D team. Chuangxian has designed and developed a 28nm photosensitive grating switch PVG chip technology in China, and successfully mass-produced and applied it to 60V, 400V, 600V high and low voltage, low internal resistance, and low capacitance optoelectronic coupling relay chips. It covers 1500kVrms SOP ultra small packages and 3750kVrms isolation enhanced conventional SMD, DIP and other different packages, as well as single channel, dual channel, hybrid dual channel, normally open and normally closed circuit products. It also includes 200V SOI MOS/LIGBT integrated chips, 100V CMOS/LDMOS integrated chips, 8-bit and 32-bit single-chip microcontrollers and other integrated circuit products, all of which have been recognized as new products by the market, key scientific research units, and testing institutions.
Most of the engineers in the company's core R&D team hold a master's degree or above, and there are multiple PhDs leading the development of projects. The company has established a standardized system for technological innovation and intellectual property management, and has accumulated numerous core technologies in circuit design, semiconductor device and process design, reliability design, device model extraction, and has multiple international and domestic independent invention patents.
The enterprise goal of Guojing Micro Semiconductor is to "be a national treasure, starting from crystal, self strengthening and independent, and achieve a hundred years". We provide employees with wonderful development space and customers with excellent product services. We sincerely look forward to working with you to win the future together.
