The losses of MOS transistors can be estimated by calculating their current losses and power losses.
Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:
I_loss = I_drain × R_on
Among them, I2 drain is the drain source current of the MOS transistor, and R0 on is the on resistance of the MOS transistor.
Power loss refers to the loss generated during the switching operation of a MOS transistor, as the internal capacitance of the MOS transistor needs to be charged and discharged. This loss can be calculated using the following formula:
P_loss = C_gd × V_gs^2 × f_sw
Among them, C_gd is the drain source capacitance of the MOS transistor, V_gs is the gate source voltage of the MOS transistor, and f_sw is the switching frequency of the MOS transistor.
Therefore, the total loss of MOS transistor can be calculated by the following formula:
P_total = I_loss × V_ds + P_loss
Among them, V_ds is the drain source voltage of the MOS transistor.
The above is the basic calculation method for MOS transistor losses, and specific factors such as process and device parameters need to be considered in actual calculations.