High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:
High manufacturing cost: The manufacturing cost of SiC MOSFET devices is relatively high, which limits their use in large-scale applications. Manufacturing these devices requires high-purity silicon and carbon sources, and the production process requires higher temperatures and pressures.
Technical challenge: The production process of SiC MOSFET devices is relatively complex, requiring the manufacture of very small structures and the implementation of complex electronic devices on these structures. This requires overcoming technical challenges in multiple aspects such as design, material selection, and processing.
Reliability and stability: The reliability and stability of SiC MOSFET devices are important issues. These devices are highly sensitive to changes in environment, voltage, and temperature, and are susceptible to factors such as charge injection, breakdown, and damage.
Low popularity: Compared to traditional silicon MOSFET devices, SiC MOSFET devices have a lower popularity. This means that electronic designers need more knowledge and skills to design and use these devices, which may be a limiting factor for some applications.
Although high-voltage SiC MOSFET devices have great potential in certain fields, factors such as cost, technical challenges, reliability, and stability still need to be addressed. With the advancement of technology and the increasing demand for applications, it is believed that these problems will gradually be overcome, and the development of high-voltage SiC MOSFET devices will also accelerate.