Cascode SiC MOSFET has faster switching speed and lower switching loss compared to ordinary SiC MOSFET. This is because the Cascoe SiC MOSFET structure cascades two MOSFETs, one of which is typically a low voltage side Si MOSFET and the other is a high voltage side SiC MOSFET. This structure allows Si MOSFETs to bear a larger portion of the switching power and transition losses, while SiC MOSFETs bear a larger voltage load, effectively improving the switching speed and efficiency of the entire device.
The Cascode SiC (silicon carbide common source common gate) structure may have faster switching speeds than ordinary SiC devices in some cases.
The Cascode structure combines the characteristics of Si (silicon) MOSFET and SiC devices, and through optimized design and driving methods, it is possible to achieve lower on resistance, faster switching conversion, and lower switching losses.
However, its speed advantage is not absolute and is also influenced by various factors, such as specific circuit design, driver circuit performance, heat dissipation conditions, as well as device parameters and quality.
In practical applications, it is necessary to comprehensively consider various factors to evaluate the performance of Cascoe SiC and ordinary SiC devices.
