There may be several reasons for the different gate threshold voltages (Vth) of SiC MOSFETs, including:
Material differences: The gate threshold voltage of SiC MOSFET depends on the properties of its main structural materials, and different materials may lead to differences in threshold voltage.
Manufacturing differences: Different manufacturing processes may also lead to differences in the gate threshold voltage of SiC MOSFETs.
Structural differences: The structural design of SiC MOSFETs may also lead to differences in gate threshold voltage, such as in doping and other processes.
Temperature effect: Temperature also has an impact on the threshold voltage of SiC MOSFET gates, and different temperatures may lead to differences in threshold voltage.
The above reasons can all lead to differences in the gate threshold voltage of SiC MOSFETs. Therefore, when selecting SiC MOSFETs, careful consideration and selection of products suitable for specific applications should be made.
