JX7S0750R170T3_JX_MOSFETS_N-ch_60W_Parameters_ Price

JX7S0750R170T3,JX,MOSFETS

Attribute Name	Attribute Value
Manufacturer	JX
Product Series	JX-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Attribute Name

Attribute Value

Manufacturer

Product Series

JX-MOS

Product Type

MOSFETS

EU RoHS

Compliant(2011/65/EU)

EU REACH

Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Company Profile	公司简介.pdf
Data Sheet	JX7S0750R170T3.pdf

File Type

File Name

Company Profile

公司简介.pdf

Data Sheet

JX7S0750R170T3.pdf

Product Recommendation Maker Dynamics Applications

Combination of Silicon Carbide (SiC) Power Management Solutions Silicon carbide solutions support the replacement of aircraft's pneumatic and hydraulic systems with smaller, lighter, and more efficient electrical solutions to power onboard AC generators, actuators, and auxiliary power units (APU). This type of solution can also reduce the maintenance requirements of these systems. However, the most significant contribution of SiC technology lies in its mission to electrify commercial transport vehicles, which are one of the world's largest sources of GHG emissions. With the advent of 1700V metal oxide semiconductor field-effect transistors (MOSFETs) and configurable digital gate drive technology, today's SiC solutions enable designers to generate maximum productivity with minimal energy consumption for these systems.

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Calculation method and formula for MOS transistor losses The losses of MOS transistors can be estimated by calculating their current losses and power losses. Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

The switching performance of SiC MOSFET is controlled by gate drive The switching performance of SiC MOSFET is controlled by gate drive. Voltage source gate drive (VSG) is the most widely used structure in MOSFETs due to its low cost and simplified structure.

High power thyristor 4H SiC GTO 4H SiC GTO thyristor is a promising high-power device with broad application prospects in the field of high-power power supplies. With the continuous improvement of technology and the increase of market demand, 4H SiC GTO thyristors will be widely used.

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

Can digital signals pass through isolation chips Can digital signals pass through isolation chips? The answer is yes. Digital signals can be transmitted through isolation chips. Isolation chips are mainly used to isolate signals for the purpose of electrical isolation, ground isolation, or optical isolation. Isolation chips typically consist of two parts: isolation front-end and isolation back-end.

What are the differences in application scenarios between single FET and MOSFET transistors? Single FET and MOSFET have a wide range of application prospects in switch circuits and power amplifiers, and the specific choice should be determined according to the specific application scenario and requirements.

Introduction to Power MOSFETs for Motor Drive Applications The application of motor drive is quite extensive, among which power MOSFET plays an important role. Anson Mei has a diverse range of power MOSFET product lines, among which NTBLS1D5N10MC unipolar, N-channel power MOSFET can meet the stringent requirements of related applications and is one of the best choices for motor drive control.

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Product number：	MOS-MM141N0W60M1017223JX
Manufacturer Product Number：	JX7S0750R170T3
Manufacturer ：	JX
Series ：	JX-MOS
Product Type ：	MOSFETS
Configuration ：	N-ch
Power Dissipation (PD) ：	60W
Continuous Drain Current (ID) ：	5A
Drain-Source Voltage (V) ：	1700V
Package ：	TO263-7
Description：	MOS ,JX7S0750R170T3 ,N-ch ,60W ,5A ,1700V ,TO-263-7

JX7S0750R170T3,JX,MOSFETS

JX7S0750R170T3

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JX7S0750R170T3,JX,MOSFETS

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