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JX3S0040R120M,JX,MOSFETS

JX3S0040R120M

MOS ,JX3S0040R120M ,N-ch ,325W ,60A ,1200V ,TO247-3

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The image is for reference only, please refer to the drawing for details

Company Profile：公司简介.pdf

Data Sheet： JX3S0040120M.pdf

Product number：	MOS-MM136N325W60A12220JX
Manufacturer Product Number：	JX3S0040R120M
Manufacturer ：	JX
Series ：	JX-MOS
Product Type ：	MOSFETS
Configuration ：	N-ch
Power Dissipation (PD) ：	325W
Continuous Drain Current (ID) ：	60A
Drain-Source Voltage (V) ：	1200V
Package ：	TO247-3
Description：	MOS ,JX3S0040R120M ,N-ch ,325W ,60A ,1200V ,TO247-3

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	JX
Product Series	JX-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name
Company Profile	公司简介.pdf
Data Sheet	JX3S0040120M.pdf

Lead time： Estimated delivery date 2026-07-19

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$8.224616

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$4.797692

1000

$3.975231

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MOQ： 1800

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Product Recommendation Maker Dynamics Applications

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The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

Silicon carbide (SiC) power devices need to be used in conjunction with pull-down resistors Silicon carbide (SiC) pull-down resistor usually refers to the resistor used in SiC power devices to control the closing speed of the device. In SiC power devices, due to their high-speed switching characteristics and high peak voltage, high peak currents are generated when the control device is turned off, which can cause equipment failure or electromagnetic interference. Therefore, in SiC power devices, it is necessary to reduce the peak current during the shutdown process by using pull-down resistors to protect the equipment and reduce electromagnetic interference.

Introduction to the Principle and Function of SiC Silicon Carbide MOSFET Silicon carbide MOSFET is a type of MOSFET manufactured based on silicon carbide material. Its structure mainly includes a silicon carbide substrate, an insulation layer, a gate electrode, a drain electrode, and a source electrode. In its working principle, when the voltage applied to the gate changes, the silicon carbide MOSFET can achieve control from the on state to the off state, realizing the function of power switching. Silicon carbide MOS recommendation: Junxin MOS

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

The switching performance of SiC MOSFET is controlled by gate drive The switching performance of SiC MOSFET is controlled by gate drive. Voltage source gate drive (VSG) is the most widely used structure in MOSFETs due to its low cost and simplified structure.

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

High power thyristor 4H SiC GTO 4H SiC GTO thyristor is a promising high-power device with broad application prospects in the field of high-power power supplies. With the continuous improvement of technology and the increase of market demand, 4H SiC GTO thyristors will be widely used.

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