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JX4S0025R170M,JX,MOSFETS

JX4S0025R170M

MOS ,JX4S0025R170M ,N-ch ,484W ,100A ,1700V ,TO247-4

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The image is for reference only, please refer to the drawing for details

Company Profile：公司简介.pdf

Data Sheet： JX4S0025R170M.pdf

Product number：	MOS-MM145N484W10017221JX
Manufacturer Product Number：	JX4S0025R170M
Manufacturer ：	JX
Series ：	JX-MOS
Product Type ：	MOSFETS
Configuration ：	N-ch
Power Dissipation (PD) ：	484W
Continuous Drain Current (ID) ：	100A
Drain-Source Voltage (V) ：	1700V
Package ：	TO247-4
Description：	MOS ,JX4S0025R170M ,N-ch ,484W ,100A ,1700V ,TO247-4

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	JX
Product Series	JX-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name
Company Profile	公司简介.pdf
Data Sheet	JX4S0025R170M.pdf

Lead time： Estimated delivery date 2026-06-07

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$45.692308

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$37.315384

50

$30.461538

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200

$26.653846

1000

$22.084615

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MPQ：1800

MOQ： 1800

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Product Recommendation Maker Dynamics Applications

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The Development Trend of High Voltage SiC MOSFET The research on high-voltage SiC MOSFETs is gradually deepening, mainly focusing on the design, preparation, and detection of high-voltage SiC MOSFETs. In the past two years, Sic Mosfet has broken through the peak tunneling voltage of 2600V, with crystal surface insulation characteristics as high as 200MV • cm-1, and static performance reaching 500A/1700V for a single chip in a half bridge topology. It can also support constant current and constant voltage regulator operation. In addition, there are SiC Mosfets designed for solid-state dye solar energy to meet the needs of these applications.

Will Cascode SiC be faster than regular SiC? The Cascode SiC (silicon carbide common source common gate) structure may have faster switching speeds than ordinary SiC devices in some cases. The Cascode structure combines the characteristics of Si (silicon) MOSFET and SiC devices, and through optimized design and driving methods, it is possible to achieve lower on resistance, faster switching conversion, and lower switching losses.

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

Voltage polarity and symbol diagram of MOS transistor, N-MOS and P-MOS The following text introduces the symbol rules for N-MOS voltage polarity and P-MOS voltage polarity respectively

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

High power thyristor 4H SiC GTO 4H SiC GTO thyristor is a promising high-power device with broad application prospects in the field of high-power power supplies. With the continuous improvement of technology and the increase of market demand, 4H SiC GTO thyristors will be widely used.

ROHM Silicon Carbide BM2SC12xFP2-LBZ Model TO263-7L Package 1700V BM2SC12xFP2-LBZ is an advanced AC/DC converter IC in the industry, which adopts an integrated package. It has built a 1700V withstand voltage SiC MOSFET and a control circuit optimized for its drive into a small surface mount package (TO263-7L). Mainly suitable for auxiliary power supply of industrial equipment such as general-purpose inverters, AC servos, commercial air conditioners, street lamps, etc. that require handling high power. In addition, it can ensure long-term stable supply, which is very suitable for industrial equipment applications. (ROHM ROHM)

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

Silicon carbide (SiC) power devices need to be used in conjunction with pull-down resistors Silicon carbide (SiC) pull-down resistor usually refers to the resistor used in SiC power devices to control the closing speed of the device. In SiC power devices, due to their high-speed switching characteristics and high peak voltage, high peak currents are generated when the control device is turned off, which can cause equipment failure or electromagnetic interference. Therefore, in SiC power devices, it is necessary to reduce the peak current during the shutdown process by using pull-down resistors to protect the equipment and reduce electromagnetic interference.

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