The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Vgs refers to the voltage value that adjusts the conduction current of MOSFET by controlling the gate voltage. In testing, parameters such as drain current and on resistance of MOSFETs at different Vgs are usually measured to evaluate their performance. For SiC MOSFETs, due to their high electric field strength and high-temperature characteristics, Vgs testing requires special attention to the anti-interference ability and temperature control of the testing environment to ensure the accuracy and reliability of the test results.
Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process. In SiC materials, the reverse recovery current is much smaller than that in Si materials. This is because SiC materials have higher electron affinity and faster electron recombination rate, which makes the reverse recovery time of SiC diodes shorter, resulting in a smaller reverse recovery current. Meanwhile, due to the high temperature resistance of SiC materials, higher junction temperatures can be used to improve the switching speed and reliability of equipment, which also helps to reduce reverse recovery current. Therefore, the reverse recovery current of diodes and MOSFET devices made of SiC materials is often much smaller than that of Si devices under the same conditions. This characteristic makes SiC power devices perform well in high-frequency switching applications, such as power electronic converters, electric vehicles, solar inverters, and other fields.