The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.
To reduce this impact, the following measures are usually taken:
Adopting a driving circuit that matches MOSFET to ensure its maximum negative pressure limit.
Add appropriate capacitors and current limiting resistors in the design to protect MOSFETs.
Use switch frequencies and duty cycles that match MOSFETs to avoid prolonged exposure to high negative pressure.
Adopt appropriate thermal management measures to reduce the temperature of the equipment and minimize the impact of negative pressure on MOSFETs.
In short, the key to reducing the threshold drift of SiC MOSFETs affected by negative pressure is to consider it during design and adopt appropriate circuits and technologies to protect the performance of MOSFETs.