Silicon carbide MOSFETs have some drawbacks, including:
Dynamic resistance: Silicon carbide MOSFETs have varying dynamic resistance under changing current and voltage conditions, which may affect the stability and efficiency of the circuit.
Overheating issue: As the current increases, the temperature of the silicon carbide MOSFET will rise, which may lead to structural damage and shortened lifespan.
Electrical burst: Under extreme voltage conditions, silicon carbide MOSFETs may experience electrical bursts, leading to circuit damage.
Control difficulty: Silicon carbide MOSFETs are more complex than other devices and require more technical knowledge to use them correctly.
Cost: The production cost of silicon carbide MOSFET is higher than other devices, so it may not be the best choice in some applications.
However, silicon carbide MOSFET is still a very useful electronic component, with advantages such as high efficiency, low noise, and high sensitivity, and is still a commonly used choice in many applications.