Compared to Si MOSFETs, SiC MOSFETs have many advantages:
High voltage stability: SiC MOSFETs have a peak repetitive recovery voltage of up to 1200 V, which is several times higher than Si MOSFETs. This makes them more suitable for high-pressure applications.
High efficiency: SiC MOSFETs have lower leakage current and higher efficiency, which can reduce system power loss.
High temperature durability: SiC MOSFETs have higher temperature durability and can operate in high temperature environments.
Fast response: SiC MOSFETs have a faster response speed, making them more effective in high-frequency applications.
High reliability: SiC MOSFETs have higher reliability because they are more stable and less susceptible to damage.
However, SiC MOSFETs are still relatively expensive and have high production costs, and are not as popular as Si MOSFETs, so they are still not feasible in some application scenarios. But with the continuous improvement of production technology, the price of SiC MOSFETs may decrease and become a choice for more applications.
Overall, SiC MOSFETs have higher efficiency, reliability, and durability, making them the preferred choice for high-voltage, high-temperature, and high-frequency applications.