LM5Z75VT1G_LRC_Zener Diodes_LM5Z75VT1G_75V_Parameters_ Price

LM5Z75VT1G,LRC,Zener Diodes

Attribute Name	Attribute Value
Manufacturer	LRC
Product Series	LRC-LM5Z2V0-75V
Product Type	Zener Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Attribute Name

Attribute Value

Manufacturer

LRC

Product Series

LRC-LM5Z2V0-75V

Product Type

Zener Diodes

EU RoHS

Compliant(2011/65/EU)

EU REACH

Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	LM5Z2V0T1G-Series.pdf

File Type

File Name

Data Sheet

LM5Z2V0T1G-Series.pdf

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Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

What are the differences in application scenarios between single FET and MOSFET transistors? Single FET and MOSFET have a wide range of application prospects in switch circuits and power amplifiers, and the specific choice should be determined according to the specific application scenario and requirements.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

Combination of Silicon Carbide (SiC) Power Management Solutions Silicon carbide solutions support the replacement of aircraft's pneumatic and hydraulic systems with smaller, lighter, and more efficient electrical solutions to power onboard AC generators, actuators, and auxiliary power units (APU). This type of solution can also reduce the maintenance requirements of these systems. However, the most significant contribution of SiC technology lies in its mission to electrify commercial transport vehicles, which are one of the world's largest sources of GHG emissions. With the advent of 1700V metal oxide semiconductor field-effect transistors (MOSFETs) and configurable digital gate drive technology, today's SiC solutions enable designers to generate maximum productivity with minimal energy consumption for these systems.

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

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Product number：	DZ-ZDZ10175V030V901LR
Manufacturer Product Number：	LM5Z75VT1G
Manufacturer ：	LRC
Series ：	LRC-LM5Z2V0-75V
Product Type ：	Zener Diodes
Part Number ：	LM5Z75VT1G
Reverse Zener Voltage(VZ) ：	75V
Power dissipation (PD) ：	200mW
Forward Voltage(VF) ：	0.9V
Package ：	SOD-523
Description：	Zener Diodes ,LM5Z75VT1G ,75V ,200mW ,0.9V ,SOD523

LM5Z75VT1G,LRC,Zener Diodes

LM5Z75VT1G

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LM5Z75VT1G,LRC,Zener Diodes

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