HNST WELCOME！ 0755-23173910

English |中文

{{searchSelectTypeText}}

Search

Alloy resistance Precision resistor fuse SMD fuse walter current diverter ever ohms

Cart {{cartCount}}

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

DTC144TE,CJ,Digital Transistors

DTC144TE

Digital Transistors ,DTC144TE ,NPN ,150mW ,100mA ,50V ,100 ,SOT-523

✖

The image is for reference only, please refer to the drawing for details

Product number：	QD-DD163N21AA03CJ
Manufacturer Product Number：	DTC144TE
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Digital Transistors
Polarity ：	NPN
Power Dissipation(PD) ：	150MW
Output Current (mA) ：	100mA
Supply Voltage (V）：	50V
Package ：	SOT-523
Description：	Digital Transistors ,DTC144TE ,NPN ,150mW ,100mA ,50V ,100 ,SOT-523

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

DTC113ZE

Digital Transistors ,DTC113ZE ,NPN ,150mW ,100mA ,50V ,33 ,SOT-523

$0.000000 More
DTC114EE

Digital Transistors ,DTC114EE ,NPN ,150mW ,100mA ,50V ,30 ,SOT-523

$0.000000 More
DTC114TE

Digital Transistors ,DTC114TE ,NPN ,150mW ,100mA ,50V ,100 ,SOT-523

$0.000000 More
DTC114WE

Digital Transistors ,DTC114WE ,NPN ,150mW ,100mA ,50V ,24 ,SOT-523

$0.000000 More
DTC114YE

Digital Transistors ,DTC114YE ,NPN ,150mW ,100mA ,50V ,68 ,SOT-523

$0.000000 More
DTC115EE

Digital Transistors ,DTC115EE ,NPN ,150mW ,100mA ,50V ,82 ,SOT-523

$0.000000 More
DTC123JE

Digital Transistors ,DTC123JE ,NPN ,150mW ,100mA ,50V ,80 ,SOT-523

$0.000000 More
DTC123YE

Digital Transistors ,DTC123YE ,NPN ,150mW ,100mA ,50V ,33 ,SOT-523

$0.000000 More
DTC124EE

Digital Transistors ,DTC124EE ,NPN ,150mW ,100mA ,50V ,56 ,SOT-523

$0.000000 More
DTC143EE

Digital Transistors ,DTC143EE ,NPN ,150mW ,100mA ,50V ,20 ,SOT-523

$0.000000 More

File

File Type	File Name

Lead time： Estimated delivery date 2026-10-22

Online Inquiry

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

Silicon carbide (SiC) diodes are diodes made from silicon carbide as raw material. Silicon carbide diode, claimed to have zero reverse recovery time, is a dedicated boost diode for high-efficiency PFC boost circuits.

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

Silicon carbide MOSFET modules have significant advantages in the application of high-power power systems such as photovoltaics, wind power, electric vehicles, and rail transit. The advantages of high voltage, high frequency, and high efficiency of silicon carbide devices can break through the limitations of existing electric vehicle motor designs due to device performance, which is currently the focus of research and development in the field of electric vehicle motors at home and abroad.

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

Analysis of Silicon Carbide (SiC) Technology Barriers: What are the Silicon Carbide Technology Barriers Groove type silicon carbide power devices have greater manufacturing difficulty. According to the different device structures, silicon carbide power devices can be mainly divided into planar devices and trench devices. Flat silicon carbide power devices have good unit consistency, simple manufacturing process, but are prone to JFET effect and have high parasitic capacitance and on state resistance. Compared to planar devices, groove type silicon carbide power devices have lower unit consistency and more complex manufacturing processes. However, the groove structure is beneficial for increasing device unit density, reducing the occurrence of JFET effect, and solving the problem of low channel mobility. It has excellent performance such as low on resistance, low parasitic capacitance, and low switching energy consumption, and has significant cost and performance advantages. It has become the mainstream direction of silicon carbide power device development.

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

Product Recommendation Maker Dynamics Applications

Product number： {{currentProduct.code}}

Product information： {{currentProduct.descCn}}

Order quantity： {{currentProduct.num}}

Cart （{{myCartItems.length}}Item）

Total amount：

{{isCn?'￥':'$'}}{{cartProductTotal}}