DTA144EKA_CJ_Digital Transistors_PNP_200mW_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-07-29

Online Inquiry

Product Recommendation Maker Dynamics Applications

TSC144ENND03

Digital Transistors ,TSC144ENND03 ,NPN ,150mW ,100mA ,50V ,68 ,WBFBP-03B(1.2×1.2×0.5)

$0.000000 More
DTC144EKA

Digital Transistors ,DTC144EKA ,NPN ,200mW ,100mA ,50V ,68 ,SOT-23-3L

$0.000000 More
TSC124ENND03

Digital Transistors ,TSC124ENND03 ,NPN ,150mW ,100mA ,50V ,56 ,WBFBP-03B(1.2×1.2×0.5)

$0.000000 More
DTC143ESA

Digital Transistors ,DTC143ESA ,NPN ,300mW ,100mA ,50V ,20 ,TO-92S

$0.000000 More
DTA143TE

Digital Transistors ,DTA143TE ,PNP ,150mW ,100mA ,50V ,100 ,SOT-523

$0.000000 More
DTA123YCA

Digital Transistors ,DTA123YCA ,PNP ,200mW ,100mA ,50V ,33 ,SOT-23

$0.000000 More
DTA124EM

Digital Transistors ,DTA124EM ,PNP ,100mW ,100mA ,50V ,56 ,SOT-723

$0.000000 More
DTA123JE

Digital Transistors ,DTA123JE ,PNP ,150mW ,100mA ,50V ,80 ,SOT-523

$0.000000 More
DTA114YM

Digital Transistors ,DTA114YM ,PNP ,100mW ,100mA ,50V ,68 ,SOT-723

$0.000000 More
DTC114YCA

Digital Transistors ,DTC114YCA ,NPN ,200mW ,100mA ,50V ,68 ,SOT-23

$0.000000 More
DTC144EM

Digital Transistors ,DTC144EM ,NPN ,100mW ,100mA ,50V ,68 ,SOT-723

$0.000000 More
DTC113ZCA

Digital Transistors ,DTC113ZCA ,NPN ,200mW ,100mA ,50V ,33 ,SOT-23

$0.000000 More
DTA144TSA

Digital Transistors ,DTA144TSA ,PNP ,300mW ,100mA ,50V ,30 ,TO-92S

$0.000000 More
DTA123YM

Digital Transistors ,DTA123YM ,PNP ,100mW ,100mA ,50V ,33 ,SOT-723

$0.000000 More
DTC114WSA

Digital Transistors ,DTC114WSA ,NPN ,300mW ,100mA ,50V ,24 ,TO-92S

$0.000000 More
DTA143ZSA

Digital Transistors ,DTA143ZSA ,PNP ,300mW ,100mA ,50V ,80 ,TO-92S

$0.000000 More
DTC143ZCA

Digital Transistors ,DTC143ZCA ,NPN ,200mW ,100mA ,50V ,80 ,SOT-23

$0.000000 More
DTC114EKA

Digital Transistors ,DTC114EKA ,NPN ,200mW ,100mA ,50V ,30 ,SOT-23-3L

$0.000000 More
DTC144TCA

Digital Transistors ,DTC144TCA ,NPN ,200mW ,100mA ,50V ,100 ,SOT-23

$0.000000 More
TSA143ENND03

Digital Transistors ,TSA143ENND03 ,PNP ,150mW ,100mA ,50V ,30 ,WBFBP-03B(1.2×1.2×0.5)

$0.000000 More

Product Recommendation Maker Dynamics Applications

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

What are the differences between gallium nitride (GaN) and silicon carbide (SiC)? Gallium nitride (GaN) and silicon carbide (SiC) power transistors, two types of compound semiconductor devices, have emerged as solutions. These devices compete with long-life silicon power lateral diffusion metal oxide semiconductor (LDMOS) MOSFETs and super junction MOSFETs. GaN and SiC devices are similar in some aspects, but there are also significant differences.

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

Product number：	QD-DD072P31A626CJ
Manufacturer Product Number：	DTA144EKA
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Digital Transistors
Polarity ：	PNP
Power Dissipation(PD) ：	200mW
Output Current (mA) ：	100mA
Supply Voltage (V）：	50V
Package ：	SOT-23-3L
Description：	Digital Transistors ,DTA144EKA ,PNP ,200mW ,100mA ,50V ,68 ,SOT-23-3L

DTA144EKA,CJ,Digital Transistors

DTA144EKA

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

DTA144EKA,CJ,Digital Transistors

DTA144EKA

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications