HNST WELCOME！ 0755-23173910

English /中文

Search

fuse Precision resistor ever ohms walter current diverter Alloy resistance SMD fuse

Cart 0

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

DTA113ZKA,CJ,Digital Transistors

DTA113ZKA

Digital Transistors ,DTA113ZKA ,PNP ,200mW ,100mA ,50V ,33 ,SOT-23-3L

✖

The image is for reference only, please refer to the drawing for details

Product number：	QD-DD005P31A426CJ
Manufacturer Product Number：	DTA113ZKA
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Digital Transistors
Polarity ：	PNP
Power Dissipation(PD) ：	200mW
Output Current (mA) ：	100mA
Supply Voltage (V）：	50V
Package ：	SOT-23-3L
Description：	Digital Transistors ,DTA113ZKA ,PNP ,200mW ,100mA ,50V ,33 ,SOT-23-3L

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File

File Type	File Name

Lead time： Estimated delivery date 2025-05-13

Product Recommendation Maker Dynamics Applications

DTC114WE

Digital Transistors ,DTC114WE ,NPN ,150mW ,100mA ,50V ,24 ,SOT-523

$0.000000 More
DTA114YSA

Digital Transistors ,DTA114YSA ,PNP ,300mW ,100mA ,50V ,68 ,TO-92S

$0.000000 More
DTA143XE

Digital Transistors ,DTA143XE ,PNP ,150mW ,100mA ,50V ,30 ,SOT-523

$0.000000 More
DTA114TKA

Digital Transistors ,DTA114TKA ,PNP ,200mW ,100mA ,50V ,100 ,SOT-23-3L

$0.000000 More
DTA143ZSA

Digital Transistors ,DTA143ZSA ,PNP ,300mW ,100mA ,50V ,80 ,TO-92S

$0.000000 More
DTC143XKA

Digital Transistors ,DTC143XKA ,NPN ,200mW ,100mA ,50V ,30 ,SOT-23-3L

$0.000000 More
DTA114YE

Digital Transistors ,DTA114YE ,PNP ,150mW ,100mA ,50V ,68 ,SOT-523

$0.000000 More

Product Recommendation Maker Dynamics Applications

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

Product Recommendation Maker Dynamics Applications